摘要:
There is provided a method of manufacturing a substrate for mounting an electronic device. The method includes disposing a protective layer on a surface of the substrate except for an edge portion thereof . An oxide film is disposed on the entirety of the surface of the substrate except for where the protective layer is disposed The oxide film is grown. A through hole is formed in a thickness direction of the substrate by selectively etching the protective layer. The oxide film is removed. In the manufacturing method, defects in the substrate for mounting an electronic device may be reduced and manufacturing costs can be reduced.
摘要:
There is provided a method of forming patterns for a semiconductor device. The method sequentially forming a first mask layer and a second mask layer on a substrate. The method also includes forming a second mask pattern layer by patterning the second mask layer. The method further includes forming a first mask pattern layer having a negative slope portion, by etching the first mask layer exposed through the second mask pattern layer. The method also includes forming a thin film layer on the substrate exposed through the first mask pattern layer.
摘要:
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要:
An electronic device and authentication processing method for operating the electronic device is provided. The authentication processing method includes transmitting to an external server credential information input in the electronic device through a user interface, receiving an authentication request of the credential information, processing the authentication request based on the credential information stored in the electronic device, or determining whether to transmit the authentication request through the communication module based on the credential information stored in the external server.
摘要:
In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
摘要:
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要:
An electronic device and a method for commonly using the electronic device are provided. The electronic device includes a housing, a memory disposed in the housing, a communication circuit in communication with at least one external device, and a processor electrically connected to the memory and the communication circuit. The processor is configured to control for installing at least one application on the memory in response to a login request from a user, receiving a logout request from the user after the at least one application is installed, transmitting data associated with the at least one application to the at least one external device using the communication circuit in response to the logout request, and deleting at least a portion of the at least one application and the data associated with the at least one application from the memory.
摘要:
Method of manufacturing a semiconductor light emitting device package are described. Semiconductor light emitting device packages includes may be formed by forming a plurality of light emitting diode chips having a structure in which a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially stacked on a wafer, forming a phosphor layer and an encapsulation layer on the first conductivity-type semiconductor layer, forming a texture on the encapsulation layer by removing a portion of the encapsulation layer from an upper surface thereof; and separating the plurality of light emitting diode chips from each other.
摘要:
An electronic device and a method for operating the electronic device are provided. The method includes obtaining first information in a first zone of the electronic device, extracting second information included in the first information in the first zone of the electronic device, and storing the second information in a second zone of the electronic device that has a higher level of security than a level of security of the first zone.
摘要:
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.