Semiconductor light emitting device and method of manufacturing the same
    11.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US09048343B2

    公开(公告)日:2015-06-02

    申请号:US13762983

    申请日:2013-02-08

    CPC classification number: H01L33/005 H01L33/0079

    Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

    Abstract translation: 一种制造半导体发光器件的方法,包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层,有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    14.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20150104890A1

    公开(公告)日:2015-04-16

    申请号:US14576667

    申请日:2014-12-19

    Inventor: Yu Seung Kim

    Abstract: A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.

    Abstract translation: 一种半导体发光器件,包括在其至少一个表面上具有第一和第二电极图案的衬底,在该衬底的表面上的发光结构,第一电极结构,第二电极结构,绝缘层,第一连接部分 连接第一电极结构和第一电极图案;以及第二连接部分,其连接从发光结构向外延伸的第二电极结构和第二电极图案。

    Semiconductor light emitting device and fabrication method thereof
    15.
    发明授权
    Semiconductor light emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08946760B2

    公开(公告)日:2015-02-03

    申请号:US13803943

    申请日:2013-03-14

    Inventor: Yu Seung Kim

    Abstract: A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.

    Abstract translation: 一种半导体发光器件,包括在其至少一个表面上具有第一和第二电极图案的衬底,在该衬底的表面上的发光结构,第一电极结构,第二电极结构,绝缘层,第一连接部分 连接第一电极结构和第一电极图案;以及第二连接部分,其连接从发光结构向外延伸的第二电极结构和第二电极图案。

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