公开(公告)号：US20230133731A1

公开(公告)日：2023-05-04

申请号：US17590863

申请日：2022-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gunho Jo ,  Ki-il Kim ,  Byounghak Hong

IPC: H01L21/822 ,  H01L27/06 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/66

Abstract: Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the semiconductor fins thereon.