Abstract:
A thermoelectric material including a thermoelectric semiconductor; and a nanosheet disposed in the thermoelectric semiconductor, the nanosheet having a layered structure and a thickness from about 0.1 to about 10 nanometers. Also a thermoelectric element and thermoelectric module including the thermoelectric material.
Abstract:
A thermoelectric material has a microstructure deformed by cryogenic impact. When the cryogenic impact is applied to the thermoelectric material, defects are induced in the thermoelectric material, and such defects increase phonon scattering, which results in enhanced figure of merit.
Abstract:
A bulk thermoelectric material having a structure in which migration of carriers is not inhibited but phonons are scattered is described. The bulk thermoelectric material includes: a bulk crystalline thermoelectric material matrix; and nanoparticles coated with a conductive material within the thermoelectric material matrix.