公开(公告)号：US5491662A

公开(公告)日：1996-02-13

申请号：US266939

申请日：1994-06-27

Applicant: Saverio Pezzini

Inventor： Saverio Pezzini

IPC: G11C17/00 ,  G06F15/78 ,  G11C16/02 ,  G11C29/00 ,  G11C29/04 ,  G11C29/12 ,  G11C29/48 ,  G11C29/50 ,  G11C16/06

CPC classification number: G11C29/48 ,  G11C29/04 ,  G11C29/50 ,  G11C16/04 ,  G11C2029/5006

Abstract: A method is provided for directly reading the current of cells of a memory forming part of a microcontroller by performing a write operation of the cells and using the existing cell programming logic. For this purpose, the programming voltage supply line is supplied with a low voltage (e.g., 1 V); the word line of the cell for reading is enabled; and a write instruction of a data item having a predetermined logic level (e.g., zero) is performed at the bit corresponding to the cell for reading. By providing an additional pass transistor connected to each reference bit line (RBL) and an additional reference cell enabling line (REF-EN), the reference cells may also be read directly.

Abstract translation: 提供一种通过执行单元的写入操作并使用现有的单元编程逻辑直接读取形成微控制器的一部分的存储器的单元的电流的方法。 为此，编程电压供应线路被提供有低电压（例如1V）; 用于读取的单元格的字线被启用; 并且在与用于读取的单元相对应的位处执行具有预定逻辑电平（例如，零）的数据项的写指令。 通过提供连接到每个参考位线（RBL）和附加参考单元使能线（REF-EN）的附加传输晶体管，也可以直接读取参考单元。