公开(公告)号：US09135109B2

公开(公告)日：2015-09-15

申请号：US13794716

申请日：2013-03-11

Applicant: Seagate Technology LLC

Inventor： Mai A. Ghaly ,  Bruce Douglas Emo

IPC: G06F11/00 ,  G06F11/10 ,  G01R31/317 ,  G11C16/34 ,  G11C7/14 ,  G11C29/02

CPC classification number: G06F11/1008 ,  G01R31/3171 ,  G06F11/1048 ,  G11C7/14 ,  G11C16/3404 ,  G11C29/021 ,  G11C29/028

Abstract: An adaptive search scheme leads to threshold voltages that have lower bit error rates over initial values. An initial reference voltage is used and data is measured for set steps in voltage about the initial value sufficient to fit a polynomial curve. A minimum is used to determine the lowest bit error rate and corresponding optimum threshold voltage. This voltage is adopted as the new threshold voltage for reading the given data.

Abstract translation: 自适应搜索方案导致阈值电压与初始值相比具有较低的误码率。 使用初始参考电压，并且测量关于初始值的电压的设定步长的数据，以足以拟合多项式曲线。 最小值用于确定最低误码率和相应的最佳阈值电压。 该电压被用作读取给定数据的新阈值电压。

公开(公告)号：US20150154065A1

公开(公告)日：2015-06-04

申请号：US14096752

申请日：2013-12-04

Applicant: Seagate Technology LLC

Inventor： Mai A. Ghaly ,  Ara Patapoutian

IPC: G06F11/07 ,  G06F11/14

CPC classification number: H03M13/17 ,  G06F11/073 ,  G06F11/076 ,  G06F11/079 ,  G06F11/0793 ,  G06F11/1048 ,  G06F11/1402 ,  G06F11/141 ,  G11B5/012 ,  G11B20/1833 ,  G11B2020/185 ,  G11C11/5642 ,  G11C16/3418 ,  G11C29/42 ,  G11C29/52

Abstract: Some embodiments involve a method of detecting an error of a memory device. It is determined whether the detected error is a catastrophic error. If it is determined that the error is a catastrophic error, an error recovery process is bypassed. Some aspects involve a method of detecting an error of a memory device. It is determined whether a counter value is above a predetermined value. If it is determined that the counter value is above the predetermined value an error recovery process is bypassed and a redundant parity recovery process is performed.

Abstract translation: 一些实施例涉及检测存储器件的错误的方法。 确定检测到的错误是否是灾难性错误。 如果确定错误是灾难性错误，则绕过错误恢复过程。 一些方面涉及一种检测存储器件的错误的方法。 确定计数器值是否高于预定值。 如果确定计数器值高于预定值，则旁路错误恢复处理并执行冗余奇偶校验恢复处理。

公开(公告)号：US20150154064A1

公开(公告)日：2015-06-04

申请号：US14096733

申请日：2013-12-04

Applicant: Seagate Technology LLC

Inventor： Mai A. Ghaly ,  Ara Patapoutian

IPC: G06F11/07

CPC classification number: G06F11/0793 ,  G06F1/28 ,  G06F11/073 ,  G06F11/076 ,  G11C11/5642

Abstract: An error of a solid-state non-volatile memory is detected. It is determined whether a type of the error is a first type of error. A voltage recovery process is bypassed based on whether the error is the first type of error. If it is determined that the error is a catastrophic error, the voltage error recovery process is bypassed. If it is determined that an offset of a threshold voltage is not greater than a predetermined value, the voltage error recovery process is bypassed.

Abstract translation: 检测到固态非易失性存储器的错误。 确定错误的类型是否是第一种类型的错误。 基于误差是否是第一种类型的错误，绕过电压恢复过程。 如果确定错误是灾难性错误，则绕过电压错误恢复过程。 如果确定阈值电压的偏移不大于预定值，则旁路电压误差恢复处理。

公开(公告)号：US20140347923A1

公开(公告)日：2014-11-27

申请号：US13900718

申请日：2013-05-23

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Mai A. Ghaly ,  Rodney Virgil Bowman

IPC: G11C16/34

CPC classification number: G06F11/1008 ,  G06F11/1048 ,  G11C7/14 ,  G11C11/5628 ,  G11C16/3404 ,  G11C16/3495 ,  G11C29/021 ,  G11C29/028

Abstract: A memory controller identifies a predominant type of error of a memory unit of solid state memory cells. An error type differential is calculated. The error type differential is a difference between a number of charge loss errors and a number of charge gain errors of the memory unit. A VT offset error differential is calculated. The VT offset error differential is a difference between a number of errors of the predominant type at a first VT offset and a number of errors of the predominant type at a second VT offset. A VT offset is determined using a ratio of the error type differential and the VT offset error differential.

Abstract translation: 存储器控制器识别固态存储器单元的存储器单元的主要类型的误差。 计算误差类型差分。 误差类型差是电荷损失误差的数量与存储器单元的充电增益误差的数量之差。 计算VT偏移误差差。 VT偏移误差差是在第一VT偏移处的主要类型的错误的数量和在第二VT偏移处的主要类型的错误的数量之间的差。 使用误差类型差和VT偏移误差的比率来确定VT偏移。