公开(公告)号：US08999118B2

公开(公告)日：2015-04-07

申请号：US13835544

申请日：2013-03-15

Applicant: Seagate Technology LLC

Inventor： Ibro Tabakovic ,  Steve Riemer ,  Jie Gong ,  Mark Thomas Kief ,  Ming Sun

IPC: C25F3/14 ,  C25D5/02 ,  C25D11/20 ,  C25D11/34 ,  G11B5/84 ,  G11B5/858 ,  G11B5/65 ,  B82Y10/00 ,  G11B5/74 ,  G11B5/82 ,  G11B5/855

CPC classification number: G11B5/84 ,  B82Y10/00 ,  C25D5/022 ,  C25D11/20 ,  C25D11/34 ,  C25F3/14 ,  G11B5/656 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11B5/858 ,  Y10T428/24355

Abstract: A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.

Abstract translation: 公开了一种用于在存储介质基板的磁性膜层上定义分立的磁性和非磁性区域的方法。 该方法对含钴磁性膜层进行阳极氧化以除去钴，然后将非磁性基质控制沉积到去除了钴的区域中。 沉积可以是电沉积，准直真空沉积或取决于所沉积的非磁性基质的组成的其它方法。 该方法可以在单个电化学电池中进行。