公开(公告)号：US20130187115A1

公开(公告)日：2013-07-25

申请号：US13785516

申请日：2013-03-05

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Haiwen Xi ,  Ming Sun ,  Dexin Wang ,  Shuiyuan Huang ,  Michael Tang ,  Song S. Xue

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1675

Abstract: Programmable metallization memory cells include an electrochemically active electrode, an inert electrode and an internal layer between the electrochemically active electrode and the inert electrode. The internal layer having a fast ion conductor material and an apertured layer having a plurality of apertures defined by an electrically insulating material. Each aperture defines at least a portion of a column of fast ion conductor material having superionic clusters.

Abstract translation: 可编程金属化存储单元包括电化学活性电极，惰性电极和电化学活性电极和惰性电极之间的内层。 所述内层具有快速离子导体材料和多孔层，其具有由电绝缘材料限定的多个孔。 每个孔限定具有超离子簇的快速离子导体材料的列的至少一部分。

公开(公告)号：US08999118B2

公开(公告)日：2015-04-07

申请号：US13835544

申请日：2013-03-15

Applicant: Seagate Technology LLC

Inventor： Ibro Tabakovic ,  Steve Riemer ,  Jie Gong ,  Mark Thomas Kief ,  Ming Sun

IPC: C25F3/14 ,  C25D5/02 ,  C25D11/20 ,  C25D11/34 ,  G11B5/84 ,  G11B5/858 ,  G11B5/65 ,  B82Y10/00 ,  G11B5/74 ,  G11B5/82 ,  G11B5/855

CPC classification number: G11B5/84 ,  B82Y10/00 ,  C25D5/022 ,  C25D11/20 ,  C25D11/34 ,  C25F3/14 ,  G11B5/656 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11B5/858 ,  Y10T428/24355

Abstract: A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.

Abstract translation: 公开了一种用于在存储介质基板的磁性膜层上定义分立的磁性和非磁性区域的方法。 该方法对含钴磁性膜层进行阳极氧化以除去钴，然后将非磁性基质控制沉积到去除了钴的区域中。 沉积可以是电沉积，准直真空沉积或取决于所沉积的非磁性基质的组成的其它方法。 该方法可以在单个电化学电池中进行。

公开(公告)号：US08772122B2

公开(公告)日：2014-07-08

申请号：US13940547

申请日：2013-07-12

Applicant: Seagate Technology LLC

Inventor： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

IPC: H01L21/20

CPC classification number: H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract translation: 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。

公开(公告)号：US20130228734A1

公开(公告)日：2013-09-05

申请号：US13864359

申请日：2013-04-17

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Venkatram Venkatasamy ,  Ming Sun ,  Dadi Setiadi

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16 ,  H01L45/1608

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal

Abstract translation: 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 牺牲金属设置在电化学活性电极和惰性电极之间。 牺牲金属具有比成丝金属更负的标准电极电位

公开(公告)号：US20130330901A1

公开(公告)日：2013-12-12

申请号：US13940547

申请日：2013-07-12

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract translation: 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。

公开(公告)号：US20130202915A1

公开(公告)日：2013-08-08

申请号：US13835544

申请日：2013-03-15

Applicant: Seagate Technology, LLC

Inventor： Ibro Tabakovic ,  Steve Riemer ,  Jie Gong ,  Mark Thomas Kief ,  Ming Sun

IPC: G11B5/84 ,  G11B5/65

CPC classification number: G11B5/84 ,  B82Y10/00 ,  C25D5/022 ,  C25D11/20 ,  C25D11/34 ,  C25F3/14 ,  G11B5/656 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11B5/858 ,  Y10T428/24355

Abstract: A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.

Abstract translation: 公开了一种用于在存储介质基板的磁性膜层上定义分立的磁性和非磁性区域的方法。 该方法对含钴磁性膜层进行阳极氧化以除去钴，然后将非磁性基质控制沉积到去除了钴的区域中。 沉积可以是电沉积，准直真空沉积或取决于所沉积的非磁性基质的组成的其它方法。 该方法可以在单个电化学电池中进行。