公开(公告)号：US20220254932A1

公开(公告)日：2022-08-11

申请号：US17617411

申请日：2020-06-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akio SUZUKI ,  Haruyuki BABA

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device for high power consumption is provided. The semiconductor device includes a substrate, a first conductor over the substrate, a first metal oxide over the first conductor, a first oxide over the first metal oxide, a second oxide over the first oxide, a first insulator over the second oxide, a second conductor over the first insulator, a second insulator over the second conductor, a third insulator in contact with a side surface of the second conductor, a side surface of the first insulator, and a side surface of the second insulator, a second metal oxide over the second oxide, the second insulator, and the third insulator, and a third conductor over the second metal oxide. The second conductor includes a region overlapping with the second oxide. The third conductor includes a region in contact with the second metal oxide. The second metal oxide includes a region in contact with the second oxide. The carrier concentration of the second oxide is lower than the carrier concentration the first oxide.

公开(公告)号：US20210273068A1

公开(公告)日：2021-09-02

申请号：US17324386

申请日：2021-05-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio SUZUKI ,  Shinpei MATSUDA ,  Shunpei YAMAZAKI

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/1156 ,  H01L29/788 ,  H01L21/28 ,  H01L29/778 ,  H01L29/06 ,  H01L29/775

Abstract: A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.