ELECTRONIC DEVICE
    11.
    发明申请

    公开(公告)号:US20210134801A1

    公开(公告)日:2021-05-06

    申请号:US16638799

    申请日:2018-08-27

    Abstract: An electronic device including a semiconductor device capable of intermittent driving is provided. The electronic device includes a semiconductor device, and the semiconductor device includes a current mirror circuit, a bias circuit, and first to third transistors. The current mirror circuit includes a first output terminal and a second output terminal, and the current mirror circuit is electrically connected to a power supply line through the first transistor. The current mirror circuit has a function of outputting current corresponding to a potential of the first output terminal from the first output terminal and the second output terminal. The bias circuit includes a current source circuit and a current sink circuit, the current source circuit is electrically connected to the second output terminal through the second transistor, and the current sink circuit is electrically connected to the second output terminal through the third transistor. Switching on/off states of the first to third transistors achieves intermittent driving of the semiconductor device.

    SEMICONDUCTOR DEVICE AND SYSTEM USING THE SAME

    公开(公告)号:US20180101359A1

    公开(公告)日:2018-04-12

    申请号:US15729150

    申请日:2017-10-10

    CPC classification number: G06F7/5443 G06N3/04 G06N3/0635 H01L29/7869

    Abstract: A semiconductor device capable of performing product-sum operation is provided. The semiconductor device includes a first memory cell, a second memory cell, and an offset circuit. The semiconductor device retains first analog data and reference analog data in the first memory cell and the second memory cell, respectively. A potential corresponding to second analog data is applied to each of them as a selection signal, whereby current depending on the sum of products of the first analog data and the second analog data is obtained. The offset circuit includes a constant current circuit comprising a transistor and a capacitor. A first terminal of the transistor is electrically connected to a first gate of the transistor and a first terminal of the capacitor. A second gate of the transistor is electrically connected to a second terminal of the capacitor. A voltage between the first terminal and the second gate of the transistor is held in the capacitor, whereby a change in source-drain current of the transistor can be suppressed.

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