公开(公告)号：US08928362B2

公开(公告)日：2015-01-06

申请号：US14176676

申请日：2014-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yasuko Watanabe

IPC: H03B1/00 ,  H03F3/45 ,  G11C27/02 ,  H03F3/08 ,  H03K19/003

CPC classification number: H03F3/45179 ,  G11C27/028 ,  H03F3/082 ,  H03F3/45183 ,  H03K19/00384

Abstract: The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.

Abstract translation: 晶体管受到阈值电压或迁移率的影响，这是由于由于制造工艺或使用的衬底的差异以及沟道区域晶体状态的变化导致的栅极绝缘膜的变化的因素的集合。 本发明提供了一种电路，其电路具有电容元件的两个电极可以保持特定晶体管的栅极 - 源极电压。 本发明提供一种具有能够通过使用恒流源在电容元件的两个电极之间设置电位差的功能的电路。

公开(公告)号：US20140368273A1

公开(公告)日：2014-12-18

申请号：US14475611

申请日：2014-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yasuko Watanabe

IPC: H03F3/45

CPC classification number: G09G3/3225 ,  G09G3/3648 ,  G09G2300/0833 ,  G09G2300/0876 ,  H01L27/0629 ,  H03F3/45 ,  H03F3/45076 ,  H03F3/45179 ,  H03F2203/45112 ,  H03F2203/45628 ,  H03K19/00384 ,  H03K19/01728

Abstract: A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.