DISPLAY DEVICE AND HAPTIC FEEDBACK DISPLAY METHOD THEREOF

    公开(公告)号:US20200097085A1

    公开(公告)日:2020-03-26

    申请号:US16233532

    申请日:2018-12-27

    Abstract: A display device and a haptic feedback display method of the display device are provided. The display device includes a display panel including a display region, and a touch-control sensor disposed at least in the display region and used to detect a touch-control operation. The display device also includes a control unit electrically connected to at least the display panel. The control unit is used to change an operation mode of the display device, and according to the touch-control operation detected by the touch-control sensor, to adjust a display object of the display panel. The operation mode includes at least a blind operation mode. Further, the display device includes at least one button structure disposed in the display region. In the blind operation mode, a touch surface of the display device is in a raised state at a location of a button structure of the at least one button structure.

    DISPLAY PANEL AND FABRICATION METHOD, AND DISPLAY DEVICE THEREOF

    公开(公告)号:US20200035748A1

    公开(公告)日:2020-01-30

    申请号:US16166467

    申请日:2018-10-22

    Inventor: Xingda XIA Gang LIU

    Abstract: A display panel and fabrication method, and a display device are provided. The display panel includes a display region and a non-display region. The display region includes a first substrate, containing an N-type semiconductor layer including a plurality of protrusions and a plurality of light-emitting diodes. Each light-emitting diode includes an island-shaped structure. The island-shaped structure includes a protrusion, a light-emitting layer, and a P-type semiconductor layer. The display region also includes an N electrode and a plurality of P electrodes. The N electrode has a mesh structure, and the island-shaped structure is disposed in a mesh opening of the mesh structure. The N electrode is electrically connected to the N-type semiconductor layer. The plurality of P electrodes are disposed, in a one-to-one correspondence with the plurality of light-emitting diodes, on a side opposite to the N-type semiconductor layer. Each P electrode is electrically connected to the P-type semiconductor layer.

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