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    Magnetoresistance effect element and magnetic random access memory
    11.
    发明授权
    Magnetoresistance effect element and magnetic random access memory 有权
    磁阻效应元件和磁性随机存取存储器

    公开(公告)号：US08279663B2

    公开(公告)日：2012-10-02

    申请号：US13184976

    申请日：2011-07-18

    申请人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    发明人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

    摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

    摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

    Magnetic memory device and write method of magnetic memory device
    12.
    发明授权
    Magnetic memory device and write method of magnetic memory device 有权
    磁存储器件和磁存储器件的写入方法

    公开(公告)号：US07245524B2

    公开(公告)日：2007-07-17

    申请号：US11255111

    申请日：2005-10-21

    申请人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

    发明人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.

    摘要翻译： 一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件， 具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层， 第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。

    Magnetoresistive element
    14.
    发明授权
    Magnetoresistive element 有权
    磁阻元件

    公开(公告)号：US07518907B2

    公开(公告)日：2009-04-14

    申请号：US12019743

    申请日：2008-01-25

    申请人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    发明人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

    摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

    摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
    15.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁阻效应元件和磁性随机存取存储器

    公开(公告)号：US20110309418A1

    公开(公告)日：2011-12-22

    申请号：US13184976

    申请日：2011-07-18

    申请人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    发明人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

    摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

    摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

    Magnetoresistance effect element and magnetic random access memory
    16.
    发明授权
    Magnetoresistance effect element and magnetic random access memory 有权
    磁阻效应元件和磁性随机存取存储器

    公开(公告)号：US08014193B2

    公开(公告)日：2011-09-06

    申请号：US12396778

    申请日：2009-03-03

    申请人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    发明人： Masahiko Nakayama ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

    摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

    摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 在第二铁磁层与第一非磁性层相反的一侧的第三铁磁层，并且具有平行于膜平面的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

    Magnetoresistive element
    17.
    发明授权
    Magnetoresistive element 有权
    磁阻元件

    公开(公告)号：US08009465B2

    公开(公告)日：2011-08-30

    申请号：US12364132

    申请日：2009-02-02

    申请人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    发明人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

    摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

    摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间的非磁性层，并且具有隧道电导变化依赖 在第一磁化和第二磁化之间的相对角度上。

    Magnetoresistive element
    19.
    发明授权
    Magnetoresistive element 有权
    磁阻元件

    公开(公告)号：US07355884B2

    公开(公告)日：2008-04-08

    申请号：US11245353

    申请日：2005-10-07

    申请人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    发明人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

    摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

    摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。