利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.045 秒)

    MAGNETORESISTIVE ELEMENT
    3.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20080131732A1

    公开(公告)日：2008-06-05

    申请号：US12019743

    申请日：2008-01-25

    申请人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    发明人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

    摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

    摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。

    MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF
    4.
    发明申请
    MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF 有权
    磁电元件及其制造方法

    公开(公告)号：US20130069184A1

    公开(公告)日：2013-03-21

    申请号：US13618410

    申请日：2012-09-14

    申请人： Hisanori AIKAWA ,  Hiroaki YODA ,  Masahiko NAKAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

    发明人： Hisanori AIKAWA ,  Hiroaki YODA ,  Masahiko NAKAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.

    摘要翻译： 根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层 在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。 第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。 界面层的透过率比体层高，平面尺寸比体层大。

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
    5.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁阻效应元件和磁性随机存取存储器

    公开(公告)号：US20110309418A1

    公开(公告)日：2011-12-22

    申请号：US13184976

    申请日：2011-07-18

    申请人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    发明人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Tatsuya Kishi

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

    摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

    摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
    6.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁阻效应元件和磁性随机存取存储器

    公开(公告)号：US20090244792A1

    公开(公告)日：2009-10-01

    申请号：US12396778

    申请日：2009-03-03

    申请人： Masahiko NAKAYAMA ,  Tadashi KAI ,  Sumio IKEGAWA ,  Hiroaki YODA ,  Tatsuya KISHI

    发明人： Masahiko NAKAYAMA ,  Tadashi KAI ,  Sumio IKEGAWA ,  Hiroaki YODA ,  Tatsuya KISHI

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226

    摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.

    摘要翻译： 磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。 通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动 并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

    DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
    7.
    发明申请
    DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
    磁阻效应元件和磁记忆的数据写入方法

    公开(公告)号：US20100073998A1

    公开(公告)日：2010-03-25

    申请号：US12561495

    申请日：2009-09-17

    申请人： Masahiko NAKAYAMA ,  Hisanori Aikawa ,  Tsuneo Inaba ,  Kenji Tsuchida ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Naoharu Shimomura

    发明人： Masahiko NAKAYAMA ,  Hisanori Aikawa ,  Tsuneo Inaba ,  Kenji Tsuchida ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Naoharu Shimomura

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675

    摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.

    摘要翻译： 一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始 上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层， 第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    磁性元件及其制造方法

    公开(公告)号：US20130069186A1

    公开(公告)日：2013-03-21

    申请号：US13618780

    申请日：2012-09-14

    申请人： Masaru TOKO ,  Masahiko NAKAYAMA ,  Akihiro NITAYAMA ,  Tatsuya KISHI ,  Hisanori AIKAWA ,  Hiroaki YODA

    发明人： Masaru TOKO ,  Masahiko NAKAYAMA ,  Akihiro NITAYAMA ,  Tatsuya KISHI ,  Hisanori AIKAWA ,  Hiroaki YODA

    IPC分类号： H01L27/22 ,  H01L21/8239

    CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.

    摘要翻译： 根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有 磁化方向可变并垂直于膜表面。 第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。 界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。

    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
    10.
    发明申请
    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性器件和磁性随机存取存储器

    公开(公告)号：US20100238717A1

    公开(公告)日：2010-09-23

    申请号：US12715699

    申请日：2010-03-02

    申请人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    发明人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    IPC分类号： G11C11/00 ,  G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

    摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。