公开(公告)号：US5229644A

公开(公告)日：1993-07-20

申请号：US831002

申请日：1992-02-05

申请人： Haruo Wakai ,  Nobuyuki Yamamura ,  Syunichi Sato ,  Minoru Kanbara

发明人： Haruo Wakai ,  Nobuyuki Yamamura ,  Syunichi Sato ,  Minoru Kanbara

IPC分类号： G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/136227 ,  G02F2001/133357

摘要： A TFT is formed on a transparent insulative substrate, and includes a gate electrode, a gate insulating film, a semiconductor film which has a channel portion, source and drain electrodes. An insulating film is formed on the TFT so as to cover at least the drain electrode and the gate insulating film. A transparent electrode is formed on at least part of insulating film except for a portion above the channel portion on the semiconductor film. The transparent electrode is electrically connected to the source electrode via a through hole which is formed on the insulating film at a position of the source electrode.

摘要翻译： 在透明绝缘基板上形成TFT，具有栅电极，栅极绝缘膜，具有沟道部的半导体膜，源电极和漏电极。 在TFT上形成绝缘膜，至少覆盖漏电极和栅极绝缘膜。 绝缘膜的至少一部分上形成透明电极，除了半导体膜上的沟道部分上方的部分。 透明电极通过在源电极的位置处形成在绝缘膜上的通孔与源电极电连接。

公开(公告)号：US5055899A

公开(公告)日：1991-10-08

申请号：US503270

申请日：1990-04-02

申请人： Haruo Wakai ,  Nobuyuki Yamamura ,  Syunichi Sato ,  Minoru Kanbara

发明人： Haruo Wakai ,  Nobuyuki Yamamura ,  Syunichi Sato ,  Minoru Kanbara

IPC分类号： G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/41733 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606

摘要： A thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor layer, which have the same shape and the same size and stacked one upon another. The transistor further comprises an n-type semiconductor layer formed on the semiconductor layer, an ohmic electrode formed on the n-type semiconductor layer, and a source electrode and a drain electrode both formed on the ohmic electrode. Further, a transparent electrode is electrically connected to the source electrode. The thin film transistor has no step portions. Therefore, the transistor can be manufactured with high yield, and forms a pixel having a high opening ratio.

摘要翻译： 一种薄膜晶体管，包括具有相同形状和相同尺寸并且彼此堆叠的栅电极，栅极绝缘膜和半导体层。 晶体管还包括形成在半导体层上的n型半导体层，形成在n型半导体层上的欧姆电极，以及均匀地形成在欧姆电极上的源电极和漏电极。 此外，透明电极电连接到源电极。 薄膜晶体管没有台阶部分。 因此，可以以高产率制造晶体管，并形成具有高开口率的像素。

公开(公告)号：US5003356A

公开(公告)日：1991-03-26

申请号：US503268

申请日：1990-04-02

申请人： Haruo Wakai ,  Nobuyuki Yamamura ,  Syunichi Sato ,  Minoru Kanbara

发明人： Haruo Wakai ,  Nobuyuki Yamamura ,  Syunichi Sato ,  Minoru Kanbara

IPC分类号： G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/41733 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606

摘要： A TFT array having a plurality of gate lines and a plurality of drain lines formed on a transparent substrate. The gate lines intersect with the drain lines. TFT are formed at the intersections of the gate lines and the drain lines. An insulating film is formed on the drain lines and the drain electrodes of the TFTs. Pixel electrodes are formed, each overlapping the corresponding gate line and the corresponding drain line. The pixel electrode has a large area and thus, have a high opening ratio. The TFT array can, therefore, help to provide a liquid crystal display having high contrast.

摘要翻译： 一种具有形成在透明基板上的多条栅极线和多条漏极线的TFT阵列。 栅极线与漏极线相交。 TFT形成在栅极线和漏极线的交点处。 在TFT的漏极线路和漏极电极上形成绝缘膜。 形成像素电极，每个重叠相应的栅极线和相应的漏极线。 像素电极的面积大，因此具有高的开口率。 因此，TFT阵列有助于提供具有高对比度的液晶显示器。