THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME

    公开(公告)号:US20230260698A1

    公开(公告)日:2023-08-17

    申请号:US18012834

    申请日:2020-12-24

    CPC classification number: H01G4/01 H01L25/16 H01G4/33 H01L24/16

    Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME

    公开(公告)号:US20230253446A1

    公开(公告)日:2023-08-10

    申请号:US18012809

    申请日:2020-12-24

    CPC classification number: H01L28/75 H01L28/84 H01G4/008 H01G4/33

    Abstract: To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

Patent Agency Ranking