公开(公告)号：US09356133B2

公开(公告)日：2016-05-31

申请号：US13744097

申请日：2013-01-17

Applicant: Texas Instruments Incorporated

Inventor： Christopher Boguslaw Kocon ,  Hideaki Kawahara ,  Simon John Molloy ,  Satoshi Suzuki ,  John Manning Savidge Neilson

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/08 ,  H01L29/40 ,  H01L29/45 ,  H01L29/06

CPC classification number: H01L29/7833 ,  H01L21/31105 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66181 ,  H01L29/66712 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7831

Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.

Abstract translation: 半导体器件包括中等电压MOSFET，其在包含场耦合到MOSFET的源电极的场板的RESURF沟槽之间具有垂直漏极漂移区。 具有中心开口的分流栅设置在RESURF沟槽之间的漏极漂移区的上方。 两级LDD区域设置在分裂门的中心开口下方。 接触金属叠层与三接触结构的侧面处的源极区域接触，并且在三触点结构的底表面处与主体接触区域和RESURF沟槽中的场板接触。 周边RESURF沟槽围绕着MOSFET。 外围RESURF沟槽中的场板电耦合到MOSFET的源电极。 集成缓冲器可以形成在与RESURF沟槽同时形成的沟槽中。