公开(公告)号：US20170243742A1

公开(公告)日：2017-08-24

申请号：US15436991

申请日：2017-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya TAKAHASHI ,  Mitsuhiro OKADA ,  Katsuhiko KOMORI

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L21/02647 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

Abstract: A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target substrate by a chemical vapor deposition method includes placing the target substrate having the fine recess in a processing container, and supplying a film forming gas containing an element constituting a film to be formed and a chlorine-containing compound gas into the processing container. Adsorption of the film forming gas at an upper portion of the fine recess is selectively inhibited by the chlorine-containing compound gas.