公开(公告)号：US20150054059A1

公开(公告)日：2015-02-26

申请号：US13974155

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L21/28273 ,  H01L21/31155 ,  H01L21/32105 ,  H01L21/32139 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof.

Abstract translation: 本公开的一些实施例涉及一种实现在存储器单元内包括基本上相等尺寸的离散存储元件的基本上均匀的图案的方法。 将包含第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并进行自组装成相分离的材料，该相分离材料包含第二聚合物物质的规则形式的第二聚合物种类的聚合物基质， 第一种聚合物种类。 然后去除第一或第二聚合物物质，其具有微畴图案或具有空穴图案的聚合物基质，其可以用作硬掩模，以通过蚀刻形成基本相同的离散存储元件图案， 离子注入技术或其组合。