公开(公告)号：US20200098518A1

公开(公告)日：2020-03-26

申请号：US16180313

申请日：2018-11-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Te Lee ,  Han-Chin Chiu

IPC: H01G4/10 ,  H01G4/30 ,  H01G4/20 ,  H01L27/08 ,  H01L49/02 ,  H01L23/522

Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a laminated capacitor dielectric layer including alternating layers of high-k dielectric material and high-energy band gap material, and a method of formation. In some embodiments, the MIM capacitor has a laminated capacitor dielectric layer disposed over a capacitor bottom metal layer. The laminated capacitor dielectric layer includes a first layer of a first dielectric material, a second layer of a second dielectric material disposed on top of the first layer, a third layer of a third dielectric material disposed on top of the second layer, and a fourth layer of a fourth dielectric material disposed on top of the third layer. The first and third dielectric materials have a differing capacitance and band gap energy as compared to the second and fourth dielectric materials. A capacitor top metal layer is disposed over the laminated capacitor dielectric layer.

公开(公告)号：US20220123031A1

公开(公告)日：2022-04-21

申请号：US17073553

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Ying Tsai ,  Cheng-Te Lee ,  Rei-Lin Chu ,  Ching I Li ,  Chung-Yi Yu

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor comprising a substrate. A photodetector is in the substrate. A trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. A first isolation layer extends along the sidewalls and the upper surface of the substrate that define the trench. The first isolation layer comprises a first dielectric material. A second isolation layer is over the first isolation layer. The second isolation layer lines the first isolation layer. The second isolation layer comprises a second dielectric material. A third isolation layer is over the second isolation layer. The third isolation layer fills the trench and lines the second isolation layer. The third isolation layer comprises a third material. A ratio of a first thickness of the first isolation layer to a second thickness of the second isolation layer is about 0.17 to 0.38.

公开(公告)号：US09385136B2

公开(公告)日：2016-07-05

申请号：US14745568

申请日：2015-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Tsung-Yu Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L29/788 ,  H01L27/115 ,  H01L21/32 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8239 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02 ,  H01L29/423 ,  H01L21/308 ,  H01L21/311 ,  H01L29/06 ,  H01L29/51 ,  H01L29/792

CPC classification number: H01L27/11568 ,  H01L21/02118 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/8239 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/0665 ,  H01L29/0692 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/792 ,  Y10S977/774

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract translation: 本公开的一些实施例涉及实现存储器单元内的离散存储元件的基本上均匀的图案的方法。 将具有第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并在具有第二聚合物物质的聚合物基质的具有规则形式的第二聚合物物质的相分离材料中进行自组装， 第一种聚合物种类。 然后除去聚合物基质中的第二种聚合物物质，形成孔。 然后通过孔进行蚀刻，利用聚合物基质作为硬掩模，以在设置在衬底表面上的种子层上的电介质层中形成基本上相同的孔的图案。 然后将种子层上的外延沉积物用于在介电层内生长基本上均匀的离散存储元件图案。

公开(公告)号：US09281203B2

公开(公告)日：2016-03-08

申请号：US13974155

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L21/8239 ,  H01L21/28 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L29/66

CPC classification number: H01L21/28273 ,  H01L21/31155 ,  H01L21/32105 ,  H01L21/32139 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof.

Abstract translation: 本公开的一些实施例涉及一种实现在存储器单元内包括基本相等尺寸的离散存储元件的基本上均匀的图案的方法。 将包含第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并进行自组装成相分离的材料，该相分离材料包含第二聚合物物质的规则形式的第二聚合物种类的聚合物基质， 第一种聚合物种类。 然后去除第一或第二聚合物物质，其具有微畴图案或具有空穴图案的聚合物基质，其可以用作硬掩模，以通过蚀刻形成基本相同的离散存储元件图案， 离子注入技术或其组合。

公开(公告)号：US20150054055A1

公开(公告)日：2015-02-26

申请号：US13974137

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Tsung-Yu Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L29/792 ,  H01L21/306 ,  H01L21/28

CPC classification number: H01L27/11568 ,  H01L21/02118 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/8239 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/0665 ,  H01L29/0692 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/792 ,  Y10S977/774

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract translation: 本公开的一些实施例涉及实现存储器单元内的离散存储元件的基本上均匀的图案的方法。 将包含第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并进行自组装成相分离的材料，该相分离材料包含第二聚合物物质的规则形式的第二聚合物种类的聚合物基质， 第一种聚合物种类。 然后除去聚合物基质中的第二种聚合物物质，形成孔。 然后通过孔进行蚀刻，利用聚合物基质作为硬掩模，以在设置在衬底表面上的种子层上的电介质层中形成基本上相同的孔的图案。 然后将种子层上的外延沉积物用于在介电层内生长基本上均匀的离散存储元件图案。

公开(公告)号：US11784204B2

公开(公告)日：2023-10-10

申请号：US17073553

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Ying Tsai ,  Cheng-Te Lee ,  Rei-Lin Chu ,  Ching I Li ,  Chung-Yi Yu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14689 ,  H01L27/14698

Abstract: The present disclosure relates to an image sensor comprising a substrate. A photodetector is in the substrate. A trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. A first isolation layer extends along the sidewalls and the upper surface of the substrate that define the trench. The first isolation layer comprises a first dielectric material. A second isolation layer is over the first isolation layer. The second isolation layer lines the first isolation layer. The second isolation layer comprises a second dielectric material. A third isolation layer is over the second isolation layer. The third isolation layer fills the trench and lines the second isolation layer. The third isolation layer comprises a third material. A ratio of a first thickness of the first isolation layer to a second thickness of the second isolation layer is about 0.17 to 0.38.

公开(公告)号：US20220084935A1

公开(公告)日：2022-03-17

申请号：US17022320

申请日：2020-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Lien Lin ,  Cheng-Te Lee ,  Rei-Lin Chu ,  Chii-Ming Wu ,  Yeur-Luen Tu ,  Chung-Yi Yu

IPC: H01L23/522 ,  H01L49/02 ,  H01L27/08

Abstract: Various embodiments of the present application are directed towards a metal-insulator-metal (MIM) capacitor. The MIM capacitor comprises a bottom electrode disposed over a semiconductor substrate. A top electrode is disposed over and overlies the bottom electrode. A capacitor insulator structure is disposed between the bottom electrode and the top electrode. The capacitor insulator structure comprises at least three dielectric structures vertically stacked upon each other. A bottom half of the capacitor insulator structure is a mirror image of a top half of the capacitor insulator structure in terms of dielectric materials of the dielectric structures.

公开(公告)号：US11430729B2

公开(公告)日：2022-08-30

申请号：US17022320

申请日：2020-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Lien Lin ,  Cheng-Te Lee ,  Rei-Lin Chu ,  Chii-Ming Wu ,  Yeur-Luen Tu ,  Chung-Yi Yu

IPC: H01L23/522 ,  H01L27/08 ,  H01L49/02 ,  H01L21/02

Abstract: Various embodiments of the present application are directed towards a metal-insulator-metal (MIM) capacitor. The MIM capacitor comprises a bottom electrode disposed over a semiconductor substrate. A top electrode is disposed over and overlies the bottom electrode. A capacitor insulator structure is disposed between the bottom electrode and the top electrode. The capacitor insulator structure comprises at least three dielectric structures vertically stacked upon each other. A bottom half of the capacitor insulator structure is a mirror image of a top half of the capacitor insulator structure in terms of dielectric materials of the dielectric structures.

公开(公告)号：US20150287737A1

公开(公告)日：2015-10-08

申请号：US14745568

申请日：2015-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Tsung-Yu Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L27/115 ,  H01L29/51 ,  H01L29/423 ,  H01L29/792 ,  H01L29/06

CPC classification number: H01L27/11568 ,  H01L21/02118 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/8239 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/0665 ,  H01L29/0692 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/792 ,  Y10S977/774

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract translation: 本公开的一些实施例涉及实现存储器单元内的离散存储元件的基本上均匀的图案的方法。 将具有第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并在具有第二聚合物物质的聚合物基质的具有规则形式的第二聚合物物质的相分离材料中进行自组装， 第一种聚合物种类。 然后除去聚合物基质中的第二种聚合物物质，形成孔。 然后通过孔进行蚀刻，利用聚合物基质作为硬掩模，以在设置在衬底表面上的种子层上的电介质层中形成基本上相同的孔的图案。 然后将种子层上的外延沉积物用于在介电层内生长基本上均匀的离散存储元件图案。

公开(公告)号：US09064821B2

公开(公告)日：2015-06-23

申请号：US13974137

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Tsung-Yu Chen ,  Cheng-Te Lee ,  Szu-Yu Wang ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC: H01L21/32 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8239 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02

CPC classification number: H01L27/11568 ,  H01L21/02118 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32055 ,  H01L21/32139 ,  H01L21/8239 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/0665 ,  H01L29/0692 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/792 ,  Y10S977/774

Abstract: Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

Abstract translation: 本公开的一些实施例涉及实现存储器单元内的离散存储元件的基本上均匀的图案的方法。 将包含第一和第二聚合物种类的共聚物溶液旋涂在基材的表面上，并进行自组装成相分离的材料，该相分离材料包含第二聚合物物质的规则形式的第二聚合物种类的聚合物基质， 第一种聚合物种类。 然后除去聚合物基质中的第二种聚合物物质，形成孔。 然后通过孔进行蚀刻，利用聚合物基质作为硬掩模，以在设置在衬底表面上的种子层上的电介质层中形成基本上相同的孔的图案。 然后将种子层上的外延沉积物用于在介电层内生长基本上均匀的离散存储元件图案。