公开(公告)号：US11763057B2

公开(公告)日：2023-09-19

申请号：US17358407

申请日：2021-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chi-Ming Tsai

IPC: G06F30/39 ,  G06F111/06

CPC classification number: G06F30/39 ,  G06F2111/06

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.

公开(公告)号：US11055464B2

公开(公告)日：2021-07-06

申请号：US16175687

申请日：2018-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chi-Ming Tsai

IPC: G06F30/39 ,  G06F111/06

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.

公开(公告)号：US20200057833A1

公开(公告)日：2020-02-20

申请号：US16175687

申请日：2018-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chi-Ming Tsai

IPC: G06F17/50

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.