公开(公告)号：US20240385507A1

公开(公告)日：2024-11-21

申请号：US18787490

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/20

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US12124163B2

公开(公告)日：2024-10-22

申请号：US18359954

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/2004

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US11860530B2

公开(公告)日：2024-01-02

申请号：US17809979

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/36 ,  G03F1/64 ,  G03F1/38 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/2004

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US20210326507A1

公开(公告)日：2021-10-21

申请号：US17358407

申请日：2021-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chi-Ming Tsai

IPC: G06F30/39

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.

公开(公告)号：US20240386176A1

公开(公告)日：2024-11-21

申请号：US18786780

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chi-Ming Tsai

IPC: G06F30/39 ,  G06F111/06

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.

公开(公告)号：US20230367943A1

公开(公告)日：2023-11-16

申请号：US18360445

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chi-Ming Tsai

IPC: G06F30/39

CPC classification number: G06F30/39 ,  G06F2111/06

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.

公开(公告)号：US20230367197A1

公开(公告)日：2023-11-16

申请号：US18359954

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/36 ,  G03F1/64 ,  G03F1/38 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F1/54 ,  G03F1/64 ,  G03F7/2004

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US20220350235A1

公开(公告)日：2022-11-03

申请号：US17809979

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/36 ,  G03F1/64 ,  G03F1/38 ,  G03F7/20

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US20220066312A1

公开(公告)日：2022-03-03

申请号：US17007920

申请日：2020-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chih-Chiang Tu ,  Cheng-Ming Lin ,  Ching-Yueh Chen ,  Wei-Chung Hu ,  Ting-Chang Hsu ,  Yu-Tung Chen

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/36 ,  H01L21/033 ,  G03F1/54 ,  G03F1/64

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

公开(公告)号：US12254258B2

公开(公告)日：2025-03-18

申请号：US18360445

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ta Lu ,  Chi-Ming Tsai

IPC: G06F30/39 ,  G06F111/06

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.