公开(公告)号：US11417602B2

公开(公告)日：2022-08-16

申请号：US16919234

申请日：2020-07-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Cheng Shih ,  Chia Cheng Chou ,  Li Chun Te

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L23/522

Abstract: A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.

公开(公告)号：US09768061B1

公开(公告)日：2017-09-19

申请号：US15168596

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Cheng Shih ,  Chia Cheng Chou ,  Chung-Chi Ko

IPC: H01L21/768

CPC classification number: H01L21/76825 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method of fabricating a semiconductor device includes forming a low-k dielectric layer over a substrate and depositing a cap layer over the low-k dielectric layer. A treatment process is performed to the cap layer. After the treatment process to the cap layer is performed, the low-k dielectric layer is etched to form a plurality of trenches using the cap layer as an etching mask.