公开(公告)号：US20240379557A1

公开(公告)日：2024-11-14

申请号：US18782167

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US11929328B2

公开(公告)日：2024-03-12

申请号：US17140654

申请日：2021-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/417

CPC classification number: H01L23/53266 ,  H01L21/32135 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76865 ,  H01L29/41725 ,  H01L21/31111 ,  H01L21/31116

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US20240079332A1

公开(公告)日：2024-03-07

申请号：US18504714

申请日：2023-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/417

CPC classification number: H01L23/53266 ,  H01L21/32135 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76865 ,  H01L29/41725 ,  H01L21/31116

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

公开(公告)号：US20200043858A1

公开(公告)日：2020-02-06

申请号：US16050191

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Wu ,  Shiu-Ko JangJian ,  Ting-Chun Wang ,  Yung-Si Yu

IPC: H01L23/532 ,  H01L29/417 ,  H01L21/768 ,  H01L21/3213

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.