公开(公告)号：US10008568B2

公开(公告)日：2018-06-26

申请号：US14704324

申请日：2015-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Lung Chen ,  Kang-Min Kuo ,  Wen-Hsin Chan

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/165 ,  H01L29/161

CPC classification number: H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate. The semiconductor device structure also includes a source/drain structure over the semiconductor substrate, and the source/drain structure includes a dopant. The semiconductor device structure further includes a channel region under the gate stack. In addition, the semiconductor device structure includes a semiconductor layer surrounding the source/drain structure. The semiconductor layer is configured to prevent the dopant from entering the channel region.

公开(公告)号：US20170170067A1

公开(公告)日：2017-06-15

申请号：US14968913

申请日：2015-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ruei Yeh ,  Wen-Hsin Chan ,  Kang-Min Kuo

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L21/76897 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/3085 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/535 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/78

Abstract: Provided is a semiconductor device including a substrate, a gate structure, a dielectric layer, an etch stop layer, and an adhesion layer. The gate structure is formed over the substrate. The dielectric layer is formed aside the gate structure. The adhesion layer overlays a top surface of the gate structure and extends to a first top surface of the dielectric layer. The etch stop layer is over the adhesion layer and in contact with a second top surface of the dielectric layer.