公开(公告)号：US10854459B2

公开(公告)日：2020-12-01

申请号：US15824474

申请日：2017-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Kuan Wei ,  Hsien-Ming Lee ,  Chin-You Hsu ,  Hsin-Yun Hsu ,  Pin-Hsuan Yeh

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/285 ,  H01L29/40 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

Abstract: Generally, the present disclosure provides example embodiments relating to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In an example method, a gate dielectric layer is formed over an active area on a substrate. A dummy layer that contains a passivating species (such as fluorine) is formed over the gate dielectric layer. A thermal process is performed to drive the passivating species from the dummy layer into the gate dielectric layer. The dummy layer is removed. A metal gate electrode is formed over the gate dielectric layer. The gate dielectric layer includes the passivating species before the metal gate electrode is formed.

公开(公告)号：US20200287014A1

公开(公告)日：2020-09-10

申请号：US16884053

申请日：2020-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Fen Chien ,  Hsiao-Kuan Wei ,  Hsien-Ming Lee ,  Chin-You Hsu

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L21/28

Abstract: Provided is a semiconductor device including a first n-type fin field effect transistor (FinFET) and a second n-type FinFET. The first FinFET includes a first work function layer. The first work function layer includes a first portion of a first layer. The second n-type FinFET includes a second work function layer. The second work function layer includes a second portion of the first layer and a first portion of a second layer underlying the second portion of the first layer. A thickness of the first work function layer is less than a thickness of the second work function layer. A method of manufacturing the semiconductor device is also provided.

公开(公告)号：US20190148510A1

公开(公告)日：2019-05-16

申请号：US15877391

申请日：2018-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Fen Chien ,  Hsiao-Kuan Wei ,  Hsien-Ming Lee ,  Chin-You Hsu

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L27/092

Abstract: Provided is a semiconductor device including a fin-type field effect transistor (FinFET). The first FinFET includes a first gate structure and the first gate structure includes a first work function layer. The first work function layer includes a first layer and a second layer. The first layer is disposed over the second layer. The second layer includes a base material and a dopant doped in the base material. The dopant comprises Al, Ta, W, or a combination thereof. The first layer and the second layer comprise different materials. A method of manufacturing the semiconductor device is also provided.