公开(公告)号：US20220242724A1

公开(公告)日：2022-08-04

申请号：US17719986

申请日：2022-04-13

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Jui-Chun WENG ,  Lavanya SANAGAVARAPU ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Shyh-Wei CHENG ,  Ji-Hong CHIANG ,  Hsin-Yu CHEN ,  Hsi-Cheng HSU

IPC: B81C1/00 ,  H01J37/34 ,  H01L21/02 ,  B81B3/00

Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

公开(公告)号：US20190031503A1

公开(公告)日：2019-01-31

申请号：US15904085

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Chun WENG ,  Lavanya SANAGAVARAPU ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Shyh-Wei CHENG ,  Ming-De CHEN ,  Ji-Hong CHIANG ,  Hsin-Yu CHEN ,  Hsi-Cheng HSU

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.