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公开(公告)号：US20230401885A1
公开(公告)日：2023-12-14
申请号：US18232756
申请日：2023-08-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： You-Cheng JHANG , Han-Zong PAN , Wei-Ding WU , Jiu-Chun WENG , Hsin-Yu CHEN , Cheng-San CHOU , Chin-Min LIN
IPC: G06V40/13 , G02B27/30 , G06F3/041 , G06F21/32 , H01L27/146
CPC classification number: G06V40/13 , G02B27/30 , G06F3/0412 , G06F21/32 , H01L27/14625
Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.
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公开(公告)号：US20230092567A1
公开(公告)日：2023-03-23
申请号：US17993319
申请日：2022-11-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： You-Cheng JHANG , Han-Zong PAN , Wei-Ding WU , Jiu-Chun WENG , Hsin-Yu CHEN , Cheng-San CHOU , Chin-Min LIN
IPC: G06V40/13 , G06F3/041 , G02B27/30 , H01L27/146 , G06F21/32
Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.
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公开(公告)号：US20230359056A1
公开(公告)日：2023-11-09
申请号：US18222344
申请日：2023-07-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Yu CHEN , Chun-Peng LI , Chia-Chun HUNG , Ching-Hsiang HU , Wei-Ding WU , Jui-Chun WENG , JI-Hong CHIANG , Yen-Chiang LIU , Jiun-Jie CHIOU , Li-Yang TU , Jia-Syuan LI , You-Cheng JHANG , Shin-Hua CHEN , Lavanya SANAGAVARAPU , Han-Zong PAN , Hsi-Cheng HSU
IPC: G02B27/30 , H01L31/0232 , H01L27/146
CPC classification number: G02B27/30 , H01L31/02325 , H01L27/14625
Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
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公开(公告)号：US20210116714A1
公开(公告)日：2021-04-22
申请号：US16656290
申请日：2019-10-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Yu CHEN , Yen-Chiang LIU , Jiun-Jie CHIOU , Jia-Syuan LI , You-Cheng JHANG , Shin-Hua CHEN , Lavanya SANAGAVARAPU , Han-Zong PAN , Chun-Peng LI , Chia-Chun HUNG , Ching-Hsiang HU , Wei-Ding WU , Jui-Chun WENG , Ji-Hong CHIANG , Hsi-Cheng HSU
Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.
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公开(公告)号：US20210116713A1
公开(公告)日：2021-04-22
申请号：US16655763
申请日：2019-10-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Yu CHEN , Chun-Peng LI , Chia-Chun HUNG , Ching-Hsiang HU , Wei-Ding WU , Jui-Chun WENG , Ji-Hong CHIANG , Yen-Chiang LIU , Jiun-Jie CHIOU , Li-Yang TU , Jia-Syuan LI , You-Cheng JHANG , Shin-Hua CHEN , Lavanya SANAGAVARAPU , Han-Zong PAN , Hsi-Cheng HSU
IPC: G02B27/30 , H01L27/146 , H01L31/0232
Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
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Patent Agency Ranking
公开(公告)号：US20240361609A1
公开(公告)日：2024-10-31
申请号：US18770562
申请日：2024-07-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Yu CHEN , Chun-Peng LI , Chia-Chun HUNG , Ching-Hsiang HU , Wei-Ding WU , Jui-Chun WENG , Ji-Hong CHIANG , Yen Chiang LIU , Jiun-Jie CHIOU , Li-Yang TU , Jia-Syuan LI , You-Cheng JHANG , Shin-Hua CHEN , Lavanya SANAGAVARAPU , Han-Zong PAN , Hsi-Cheng HSU
IPC: G02B27/30 , H01L27/146 , H01L31/0232
CPC classification number: G02B27/30 , H01L27/14625 , H01L31/02325
Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
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公开(公告)号：US20230400699A1
公开(公告)日：2023-12-14
申请号：US18231760
申请日：2023-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Yu CHEN , Yen-Chiang LIU , June-Jie CHIOU , Jia-Syuan LI , You-Cheng JHANG , Shin-Hua CHEN , LAVANYA SANAGAVARAPU , Han-Zong PAN , Chun-Peng LI , Chia-Chun HUNG , Ching-Hsiang HU , Wei-Ding WU , Jui-Chun WENG , Ji-Hong CHIANG , Hsi-Cheng HSU
IPC: G02B27/30 , G02B5/20 , G02B26/00 , H01L27/146 , H01L31/0216 , G06V40/13
CPC classification number: G02B27/30 , G02B5/20 , G02B26/007 , H01L27/14625 , H01L31/02162 , H01L27/1462 , G06V40/1312 , B32B2551/00 , G06V40/1318
Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.
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公开(公告)号：US20220373815A1
公开(公告)日：2022-11-24
申请号：US17881439
申请日：2022-08-04
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsin-Yu CHEN , Chun-Peng LI , Chia-Chun HUNG , Ching-Hsiang HU , Wei-Ding WU , Jui-Chun WENG , Ji-Hong CHIANG , Yen-Chiang LIU , Jiun-Jie CHIOU , Li-Yang TU , Jia-Syuan LI , You-Cheng JHANG , Shin-Hua CHEN , Lavanya SANAGAVARAPU , Han-Zong PAN , Hsi-Cheng HSU
IPC: G02B27/30 , H01L31/0232 , H01L27/146
Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
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公开(公告)号：US20220242724A1
公开(公告)日：2022-08-04
申请号：US17719986
申请日：2022-04-13
Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.
Inventor： Jui-Chun WENG , Lavanya SANAGAVARAPU , Ching-Hsiang HU , Wei-Ding WU , Shyh-Wei CHENG , Ji-Hong CHIANG , Hsin-Yu CHEN , Hsi-Cheng HSU
Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.
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公开(公告)号：US20190031503A1
公开(公告)日：2019-01-31
申请号：US15904085
申请日：2018-02-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jui-Chun WENG , Lavanya SANAGAVARAPU , Ching-Hsiang HU , Wei-Ding WU , Shyh-Wei CHENG , Ming-De CHEN , Ji-Hong CHIANG , Hsin-Yu CHEN , Hsi-Cheng HSU
Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.
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