公开(公告)号：US20220209093A1

公开(公告)日：2022-06-30

申请号：US17571299

申请日：2022-01-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hsien TSAI ,  Shang-Ying TSAI ,  Fu-Lung HSUEH ,  Shih-Ming YANG ,  Jheng-Yuan WANG ,  Ming-De CHEN

IPC: H01L35/32 ,  H01L35/34 ,  H01L35/04 ,  H01L35/22

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

公开(公告)号：US20190031503A1

公开(公告)日：2019-01-31

申请号：US15904085

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Chun WENG ,  Lavanya SANAGAVARAPU ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Shyh-Wei CHENG ,  Ming-De CHEN ,  Ji-Hong CHIANG ,  Hsin-Yu CHEN ,  Hsi-Cheng HSU

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

公开(公告)号：US20190006571A1

公开(公告)日：2019-01-03

申请号：US15637900

申请日：2017-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hsien TSAI ,  Shang-Ying TSAI ,  Fu-Lung HSUEH ,  Shih-Ming YANG ,  Jheng-Yuan WANG ,  Ming-De CHEN

IPC: H01L35/32 ,  H01L35/34 ,  H01L35/04 ,  H01L35/22

CPC classification number: H01L35/32 ,  H01L35/04 ,  H01L35/22 ,  H01L35/34

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.