公开(公告)号：US08786022B2

公开(公告)日：2014-07-22

申请号：US13052776

申请日：2011-03-21

申请人： Akira Katakami ,  Takayuki Aoyama

发明人： Akira Katakami ,  Takayuki Aoyama

IPC分类号： H01L27/092

CPC分类号： H01L21/823857 ,  H01L21/28185 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device includes a gate insulation film formed over a semiconductor substrate; a cap film formed over the gate insulation film; a silicon oxide film formed over the cap film; a metal gate electrode formed over the silicon oxide film; and source/drain diffused layers formed in the semiconductor substrate on both sides of the metal gate electrode.

摘要翻译： 半导体器件包括形成在半导体衬底上的栅极绝缘膜; 形成在栅绝缘膜上的盖膜; 形成在所述盖膜上的氧化硅膜; 形成在所述氧化硅膜上的金属栅电极; 以及形成在半导体衬底中的金属栅极两侧的源极/漏极扩散层。

公开(公告)号：US20110254106A1

公开(公告)日：2011-10-20

申请号：US13052776

申请日：2011-03-21

申请人： Akira Katakami ,  Takayuki Aoyama

发明人： Akira Katakami ,  Takayuki Aoyama

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/823857 ,  H01L21/28185 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device includes a gate insulation film formed over a semiconductor substrate; a cap film formed over the gate insulation film; a silicon oxide film formed over the cap film; a metal gate electrode formed over the silicon oxide film; and source/drain diffused layers formed in the semiconductor substrate on both sides of the metal gate electrode.

摘要翻译： 半导体器件包括形成在半导体衬底上的栅极绝缘膜; 形成在栅绝缘膜上的盖膜; 形成在所述盖膜上的氧化硅膜; 形成在所述氧化硅膜上的金属栅电极; 以及形成在半导体衬底中的金属栅极两侧的源极/漏极扩散层。

公开(公告)号：US06780699B2

公开(公告)日：2004-08-24

申请号：US10359250

申请日：2003-02-06

申请人： Yasuyuki Tamura ,  Yusuke Morisaki ,  Yoshihiro Sugita ,  Kiyoshi Irino ,  Takayuki Aoyama ,  Chikako Yoshida ,  Yoshihiro Sugiyama ,  Hitoshi Tanaka ,  Kanetake Takasaki

发明人： Yasuyuki Tamura ,  Yusuke Morisaki ,  Yoshihiro Sugita ,  Kiyoshi Irino ,  Takayuki Aoyama ,  Chikako Yoshida ,  Yoshihiro Sugiyama ,  Hitoshi Tanaka ,  Kanetake Takasaki

IPC分类号： H01L218238

CPC分类号： H01L21/823462 ,  C23C16/401 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.

摘要翻译： 一种半导体器件，其中确保了在下层绝缘膜上形成的包括下层绝缘膜和高介电常数膜的多层结构的绝缘膜的绝缘特性，以及制造这种半导体器件的方法 。 在作为下层绝缘膜的半导体基板上形成氧化硅膜或氧氮化硅膜，除去下层绝缘膜的一部分。 然后在暴露的半导体衬底和下层绝缘膜上形成其介电常数高于下层绝缘膜的介电常数的高介电常数膜。 如果下层绝缘膜是氧化硅膜，则使用不含氯的金属化合物来形成该高介电常数膜。 如果下层绝缘膜是氮氧化硅膜，则可以使用金属氯化物来形成该高介电常数膜。