公开(公告)号：US20080179689A1

公开(公告)日：2008-07-31

申请号：US11669870

申请日：2007-01-31

申请人： Tan-Chen Lee ,  Chung-Te Lin ,  Kuang-Hsin Chen ,  Chi-Hsi Wu ,  Di-Houng Lee ,  Cheng-Hung Chang

发明人： Tan-Chen Lee ,  Chung-Te Lin ,  Kuang-Hsin Chen ,  Chi-Hsi Wu ,  Di-Houng Lee ,  Cheng-Hung Chang

IPC分类号： H01L29/78 ,  H01L21/441

CPC分类号： H01L21/28518 ,  H01L21/76829 ,  H01L29/665

摘要： Disclosed herein are various embodiments of techniques for preventing silicide stringer or encroachment formation during metal salicide formation in semiconductor devices. The disclosed technique involves depositing a protective layer, such as a nitride or other dielectric layer, over areas of the semiconductor device where metal silicide formation is not desired because such formation detrimentally affects device performance. For example, silicon particles that may remain in device features that are formed through silicon oxidation, such as under the gate sidewall spacers and proximate to the perimeter of shallow trench isolation structures, are protected from reacting with metal deposited to form metal silicide in certain areas of the device. As a result, silicide stringers or encroachment in undesired areas is reduced or eliminated by the protective layer.

摘要翻译： 本文公开了用于在半导体器件中的金属自对准硅化物形成期间防止硅化物纵梁或侵入形成的技术的各种实施例。 所公开的技术包括在不需要金属硅化物形成的半导体器件的区域上沉积诸如氮化物或其它电介质层的保护层，因为这种形成不利地影响器件性能。 例如，可以保留在通过硅氧化形成的器件特征中的硅颗粒，例如在栅极侧壁间隔物附近并且靠近浅沟槽隔离结构的周边，防止在某些区域沉积以形成金属硅化物的金属反应 的设备。 结果，通过保护层减少或消除了硅化物桁条或侵入不期望的区域。