APPARATUS AND METHOD FOR SELECTED SITE BACKSIDE UNLAYERING OF SILICON, GAAS, GAXALYASZ OF SOI TECHNOLOGIES FOR SCANNING PROBE MICROSCOPY AND ATOMIC FORCE PROBING CHARACTERIZATION
    11.
    发明申请
    APPARATUS AND METHOD FOR SELECTED SITE BACKSIDE UNLAYERING OF SILICON, GAAS, GAXALYASZ OF SOI TECHNOLOGIES FOR SCANNING PROBE MICROSCOPY AND ATOMIC FORCE PROBING CHARACTERIZATION 有权
    用于扫描探针显微镜和原子力探测特征的SOI技术的硅,GAAS,GAXALYASZ的选择场所的背景设备和方法

    公开(公告)号:US20070010097A1

    公开(公告)日:2007-01-11

    申请号:US11160667

    申请日:2005-07-05

    IPC分类号: H01L21/302

    摘要: Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.

    摘要翻译: 用于在半导体工件中曝光和探测特征的装置包括中空聚焦器,用于将通过气体导管连接的工件的一部分覆盖到蚀刻剂气体的供应。 舞台支撑并定位半导体工件。 控制装置依次将平台和半导体工件移动到一系列位置。 在存在蚀刻剂气体的情况下,能量束源将聚焦能量束通过穿过浓缩器的孔引导到工件表面上的区域上。 控制装置将台架相对于集中器和能量束移动到一系列位置,以在存在蚀刻剂气体的情况下引导能量束,以暴露位于中空内部的半导体工件表面上的一系列区域 集中器的空间顺序。

    Backside unlayering of MOSFET devices for electrical and physical characterization
    12.
    发明申请
    Backside unlayering of MOSFET devices for electrical and physical characterization 失效
    用于电气和物理表征的MOSFET器件的背面非层叠

    公开(公告)号:US20050148157A1

    公开(公告)日:2005-07-07

    申请号:US10752162

    申请日:2004-01-06

    摘要: A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.

    摘要翻译: 一种用于背面非层叠半导体器件以暴露设备的FEOL半导体特征以用于随后的电和/或物理探测的方法和系统。 在半导体的背面基板层内形成窗口。 产生并引导准直离子等离子体,以便仅通过聚焦屏蔽件中的开口在后侧窗口内接触半导体。 这种聚焦的准直离子等离子体仅在窗口内接触半导体,同时半导体同时被温度控制的阶段旋转和倾斜,以均匀地去除半导体层,使得半导体特征在半导体上对应于 后视窗,曝光。 通过CAIBE处理可以增强本发明的背面未铺层。

    Backside integrated circuit die surface finishing technique and tool
    13.
    发明授权
    Backside integrated circuit die surface finishing technique and tool 失效
    背面集成电路模具表面处理技术和工具

    公开(公告)号:US06852629B2

    公开(公告)日:2005-02-08

    申请号:US10751758

    申请日:2004-01-05

    CPC分类号: B24B37/04 B24B49/16

    摘要: A method for preparing a semiconductor die for analysis comprises providing a semiconductor die having a connector on one side and an opposite, backside surface to be analyzed, providing a polishing pad for polishing the backside surface of a semiconductor die, providing a rotatable spindle for securing the polishing pad, and providing a constant force actuator on the spindle, the constant force actuator being adapted to provide constant force between the polishing pad and the backside surface of the die. The method then includes contacting the backside die surface with the polishing pad, rotating the spindle and polishing pad, and polishing the backside surface of the die while maintaining the substantially constant force of the polishing pad on the die backside surface with the constant force actuator.

    摘要翻译: 制备用于分析的半导体管芯的方法包括:提供一半导体管芯,该半导体管芯具有在一侧的连接器和相对的待分析背面,提供用于抛光半导体管芯的背面的抛光垫,提供用于固定的可旋转主轴 抛光垫,并且在主轴上提供恒定的力致动器,恒力致动器适于在抛光垫和模具的后侧表面之间提供恒定的力。 该方法然后包括使背面模具表面与抛光垫接触,旋转主轴和抛光垫,并且用恒定力致动器保持抛光垫在模具背面上的基本上恒定的力,抛光模具的背面。