公开(公告)号：US20210088907A1

公开(公告)日：2021-03-25

申请号：US17032980

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Jodi GRZESKOWIAK ,  Anthony SCHEPIS ,  Anton DEVILLIERS

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  G03F7/11 ,  G03F7/004

Abstract: A method for patterning a substrate in which a patterned photoresist structure can be formed on the substrate, the patterned photoresist structure having a sidewall. A conformal layer of spacer material can be deposited on the sidewall. The patterned photoresist structure can then be removed from the substrate, leaving behind the spacer material. Then, the substrate can be directionally etched using the sidewall spacer as an etch mask to form the substrate having a target critical dimension.