公开(公告)号：US08243176B2

公开(公告)日：2012-08-14

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

公开(公告)号：US20110284929A1

公开(公告)日：2011-11-24

申请号：US13198240

申请日：2011-08-04

申请人： Mitsuyoshi MORI ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi MORI ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

IPC分类号： H01L27/148

CPC分类号： H01L27/1463 ,  H01L27/14654

摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

摘要翻译： 在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

公开(公告)号：US07750366B2

公开(公告)日：2010-07-06

申请号：US12180920

申请日：2008-07-28

申请人： Toru Okino ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Mitsuyoshi Mori

IPC分类号： H01L31/0336 ,  H01L31/109 ,  H01L31/072 ,  H01L31/0328 ,  H01L31/113 ,  H01L31/062 ,  H01L21/324

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.

摘要翻译： 固态成像元件包括由例如N型衬底，P型层和N型层构成的由硅构成的层状衬底。 在分层基板中，形成有多个像素的成像区域和外围电路区域。 在成像区域中的层叠基板的反面部形成有到达P型层的反面的凹部，在凹部的至少内面形成有反射膜。 光在层叠基板的反面和正面反射。

公开(公告)号：US20080029796A1

公开(公告)日：2008-02-07

申请号：US11826570

申请日：2007-07-17

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14683

摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。

公开(公告)号：US4778374A

公开(公告)日：1988-10-18

申请号：US126727

申请日：1987-11-30

申请人： Hiroshi Takahashi ,  Yasutami Muto ,  Toru Okino

发明人： Hiroshi Takahashi ,  Yasutami Muto ,  Toru Okino

IPC分类号： A61F13/20 ,  A61F13/26 ,  B29C31/00 ,  B29C51/18 ,  B29C57/10 ,  B29L22/00 ,  B29L31/00

CPC分类号： A61F13/2085 ,  B29C31/002 ,  B29C51/18 ,  B29C57/10

摘要： An apparatus for continuously and rapidly forming petal-like segments at the tip of a tampon inserter into a hemispherically curved shape. Sets of molds are mounted on a support table on a rotary table turned about a shaft. Each set comprises a heating mold to heat and soften the tip of the tampon inserter and a cooling mold to shape while being cooled the heated and softened tip. The heating and cooling molds are moved by a cam so that either of the two molds is placed above the tampon inserter held in position by a gripper. The gripper comprises a pair of gripper segments that are opened and closed by a cam on the shaft and raised and lowered by another cam on the same shaft. The cams are adapted to release the tampon inserter from the gripper after the tampon inserter has been put first in the heating mold and then in the cooling mold. The tip of the tampon inserter held by the gripper first enters the heating mold to get heated. While the heated tip descends temporarily, the cooling mold is brought to above the tampon inserter. As the tampon inserter rises again, its tip comes in contact with the inner surface of the cooling mold, in which the tip is formed into a hemispherically curved shape while being cooled.

摘要翻译： 一种用于连续且快速地将卫生棉条插入器的尖端处的花瓣形节段形成为半球形弯曲形状的装置。 一组模具安装在围绕轴转动的旋转台上的支撑台上。 每组包括加热和软化棉条插入器的尖端的加热模具和冷却模具以在冷却加热和软化的尖端的同时成形。 加热和冷却模具由凸轮移动，使得两个模具中的任一个被置于通过夹持器保持在位置的棉条插入器之上。 夹持器包括一对夹持器段，其由轴上的凸轮打开和关闭，并由同一轴上的另一个凸轮升高和降低。 在将棉塞插入器首先放入加热模具中然后在冷却模具中之后，凸轮适于将棉塞插入器从夹具中释放。 由夹具保持的卫生棉条插入器的尖端首先进入加热模具以加热。 当加热的尖端临时下降时，冷却模具被带到卫生栓插入器的上方。 当棉塞插入器再次升高时，其尖端与冷却模具的内表面接触，其中尖端在冷却时形成半球形弯曲形状。