公开(公告)号：US08866059B2

公开(公告)日：2014-10-21

申请号：US13055863

申请日：2009-07-23

申请人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

发明人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

IPC分类号： H01L27/00 ,  H01L27/146 ,  H04N5/235 ,  H04N5/355

CPC分类号： H01L27/14603 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/2355 ,  H04N5/35572 ,  H04N5/3559

摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.

摘要翻译： 可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。

公开(公告)号：US08680640B2

公开(公告)日：2014-03-25

申请号：US13462895

申请日：2012-05-03

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

IPC分类号： H01L27/148

CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464

摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

摘要翻译： 固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。 各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

公开(公告)号：US08378401B2

公开(公告)日：2013-02-19

申请号：US13335537

申请日：2011-12-22

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US20120098040A1

公开(公告)日：2012-04-26

申请号：US13335537

申请日：2011-12-22

申请人： Mitsuyoshi MORI ,  Takumi YAMAGUCHI ,  Takahiko MURATA

发明人： Mitsuyoshi MORI ,  Takumi YAMAGUCHI ,  Takahiko MURATA

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US08106431B2

公开(公告)日：2012-01-31

申请号：US12178250

申请日：2008-07-23

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US20110121162A1

公开(公告)日：2011-05-26

申请号：US13055863

申请日：2009-07-23

申请人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

发明人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/2355 ,  H04N5/35572 ,  H04N5/3559

摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.

摘要翻译： 可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。

公开(公告)号：US07800144B2

公开(公告)日：2010-09-21

申请号：US12233080

申请日：2008-09-18

申请人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US20100220228A1

公开(公告)日：2010-09-02

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

公开(公告)号：US07638853B2

公开(公告)日：2009-12-29

申请号：US11826570

申请日：2007-07-17

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L21/00 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14683

摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。

公开(公告)号：US20090002538A1

公开(公告)日：2009-01-01

申请号：US12202804

申请日：2008-09-02

申请人： Mitsuyoshi MORI ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi MORI ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H04N5/335

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。