Image forming apparatus and a sheet conveying method of the image forming apparatus
    11.
    发明授权
    Image forming apparatus and a sheet conveying method of the image forming apparatus 失效
    图像形成装置和图像形成装置的片材输送方法

    公开(公告)号:US07356303B2

    公开(公告)日:2008-04-08

    申请号:US11114869

    申请日:2005-04-26

    IPC分类号: G03G15/00 B65H29/70 B65H23/34

    CPC分类号: G03G15/6576

    摘要: An image forming apparatus having: an image forming portion to form an image on a sheet; a fixing device to fix the image to the sheet by heating; a conveying path switching member to switch a conveying direction of the sheet, which is provided on downstream of the fixing device in a sheet conveying direction; a first conveying path which has a first curved portion and is provided on downstream of the conveying path switching member; a second conveying path which has a second curved portion and is provided on downstream of the conveying path switching member; a curl applying member which is provided on downstream of the fixing device, and on upstream of the first and second curved portions; and a control unit to control driving of the conveying path switching member and of the curl applying member.

    摘要翻译: 一种图像形成装置,具有:在片材上形成图像的图像形成部; 用于通过加热将图像固定到片材的定影装置; 输送路径切换构件,用于切换在片材输送方向上设置在定影装置的下游的片材的输送方向; 第一输送路径,其具有第一弯曲部分,并设置在输送路径切换构件的下游; 第二输送路径,具有第二弯曲部分,并设置在输送路径切换构件的下游; 卷曲施加构件,其设置在所述定影装置的下游,并且在所述第一和第二弯曲部分的上游; 以及控制单元,用于控制输送路径切换构件和卷曲施加构件的驱动。

    Process for making a silicon carbide sintered body
    13.
    发明授权
    Process for making a silicon carbide sintered body 失效
    制造碳化硅烧结体的方法

    公开(公告)号:US6001756A

    公开(公告)日:1999-12-14

    申请号:US853719

    申请日:1997-05-09

    IPC分类号: C04B35/575 C04B35/569

    CPC分类号: C04B35/575

    摘要: A silicon carbide sintered body according to the present invention is a silicon carbide sintered body having a density of 2.9 g/cm.sup.3 or higher, obtained by means of hot pressing a mixture of silicon carbide powder and a non-metal-based sintering additive such as an organic compound which produces carbon upon heating at a temperature of 2,000.degree. C. to 2,400.degree. C. and under a pressure of 300 to 700 kgf/cm.sup.2 in a non-oxidizing atmosphere. It is preferable that the silicon carbide powder have an average particle diameter of from 0.01 to 10 .mu.m and that the non-metal sintering additive be a resol type phenol resin. The present invention is to provide a silicon carbide sintered body of high quality which has a high density, a high purity, and a high electrical conductivity and which is useful for semiconductor manufacturing industry.

    摘要翻译: 根据本发明的碳化硅烧结体是通过热压碳化硅粉末和非金属类烧结添加剂的混合物得到的密度为2.9g / cm 3以上的碳化硅烧结体,例如 在非氧化性气氛中,在2,000〜2400℃,300〜700kgf / cm2的压力下加热生成碳的有机化合物。 碳化硅粉末的平均粒径优选为0.01〜10μm,非金属烧结添加剂为甲阶型酚醛树脂。 本发明提供一种高密度,高纯度,高导电性的高品质碳化硅烧结体,可用于半导体制造业。

    METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
    15.
    发明申请
    METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE 审中-公开
    单晶碳化硅单晶,碳化硅单晶和碳化硅单晶基板的制造方法

    公开(公告)号:US20130153836A1

    公开(公告)日:2013-06-20

    申请号:US13820622

    申请日:2011-09-02

    申请人: Taro Miyamoto

    发明人: Taro Miyamoto

    IPC分类号: C30B23/02 C30B29/36

    CPC分类号: C30B23/02 C30B23/00 C30B29/36

    摘要: In a powder fabrication step (S1) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon carbide powder as transition metal atoms for the silicon carbide powder, which is the source or silicon carbide, to produce a sublimation starting material (50). In a purification process step (S2), the sublimation starting material (50) is disposed in a purified graphite crucible (10), and a sublimation/growth step (S3) is carried out. When a growth height for this single crystal such that the donor concentration and acceptor concentration are equal in the single crystal of silicon carbide obtained by growth of sublimated raw material on a seed crystal in the sublimation/growth step (S3) is achieved, nitrogen gas is introduced at 0.5-100 ppm of an inert atmospheric gas.

    摘要翻译: 在该碳化硅单晶的制造方法的粉末制造工序(S1)中,将含有钒,铌,钨中的至少一种的金属材料混入作为碳化硅粉末的过渡金属原子的碳化硅粉末中, 是源或碳化硅,以产生升华起始材料(50)。 在纯化工序(S2)中,将升华原料(50)配置在纯化石墨坩埚(10)中,进行升华/生长工序(S3)。 当通过在升华/生长步骤(S3)中在晶种上生长升华的原料获得的碳化硅单晶中的供体浓度和受主浓度相等时,实现该单晶的生长高度,氮气 以0.5-100ppm的惰性气体气体引入。

    Linear synchronous motor and linear motor actuator
    16.
    发明授权
    Linear synchronous motor and linear motor actuator 有权
    线性同步电机和直线电机执行器

    公开(公告)号:US07888827B2

    公开(公告)日:2011-02-15

    申请号:US12088829

    申请日:2006-09-05

    IPC分类号: H02K41/02

    CPC分类号: H02K41/03

    摘要: Provided is a linear synchronous motor in which, when a three-phase alternating current passes through a coil of a mover, thrust forces generated by the alternating currents of each phase are equalized, thereby making it possible to minimize variation in thrust force, the linear synchronous motor including: a stator magnet (4) in which N poles and S poles are alternately arranged linearly; and a mover (5) which is opposed to the stator magnet (4) at an interval therefrom, and which generates a shifting magnetic field along with passage of a three-phase alternating current, for applying a thrust force to the stator magnet (4), in which: the mover (5) includes a core member (50) in which teeth (52), the number of which is a whole-number multiple of a number of phases of the alternating currents, are arranged, and a coil (51) which is wound around the teeth (52) and through which the alternating current of any one of the phases passes; and of the plurality of teeth (52) provided to the core member (50), the teeth (52) corresponding to a u phase and a w phase of the alternating currents passing through the coil (51) wound around the teeth (52) at both ends of the core member (50) have distal ends protruding toward the stator magnet (4) further than distal ends of the residual teeth (52).

    摘要翻译: 提供了一种线性同步电动机,其中当三相交流电流通过动子的线圈时,由每相的交流电产生的推力相等,从而使推力的变化最小化,线性 同步电动机包括:定子磁体(4),其中N极和S极线性地交替排列; 以及与定子磁体(4)间隔开的移动体(5),并且随着三相交流电流产生移动磁场,用于向定子磁体(4)施加推力 ),其中:所述动子(5)包括芯构件(50),所述芯构件(50)布置有齿数(52),其数量是所述交流电的多个相位的整数倍,并且线圈 (51),其缠绕在所述齿(52)周围,并且任一相的交流电通过所述齿; 和设置在所述芯构件(50)上的所述多个齿(52)中,所述齿(52)对应于在两者上缠绕在所述齿(52)上的通过所述线圈(51)的交流电的au相和相位 芯构件(50)的端部具有远离剩余齿(52)的远端朝向定子磁体(4)突出的远端。

    PRODUCTION APPARATUS OF POLYCARBONATE RESIN AND PRODUCTION METHOD OF POLYCARBONATE RESIN
    17.
    发明申请
    PRODUCTION APPARATUS OF POLYCARBONATE RESIN AND PRODUCTION METHOD OF POLYCARBONATE RESIN 有权
    聚碳酸酯树脂的生产方法和聚碳酸酯树脂的生产方法

    公开(公告)号:US20100137549A1

    公开(公告)日:2010-06-03

    申请号:US12304791

    申请日:2007-03-29

    IPC分类号: C08G18/44 B01J19/18

    CPC分类号: C08G64/205 C08G64/307

    摘要: The present invention relates to a production apparatus of a polycarbonate resin in which generation of adherents or foreign matters in a polymerization tank is reduced, and a production method of a polycarbonate resin in which crystallized foreign matters or burned foreign matters are reduced, by melt method. The present invention relates to a continuous production apparatus of a polycarbonate resin using a plurality of polymerization tanks, wherein when supplying a molten reactant to a liquid phase in a polymerization tank, or supplying the molten reactant to a gas phase in the polymerization tank by an insertion pipe, in at least one polymerization tank, and/or producing a polycarbonate resin by an ester exchange reaction between an aromatic dihydroxy compound and a carbonic diester by using three vertical polymerization tanks and one horizontal polymerization tank, equipped with a stirring device, a wall surface temperature T of a distillation pipe 10c is set to a temperature higher than a boiling point t1 of by-produced phenol such that the relationship of the boiling t1 of the by-produced phenol under a pressure in at least a third vertical polymerization tank 14, the wall surface temperature T of the distillation pipe 10c and an inner temperature t2 of the third vertical polymerization tank 14 is satisfied with the formula (1). t1

    摘要翻译: 聚碳酸酯树脂的制造装置技术领域本发明涉及一种聚碳酸酯树脂的制造装置,其特征在于,在聚合槽内产生粘附剂或杂质,减少聚碳酸酯树脂的制造方法, 。 本发明涉及一种使用多个聚合槽的聚碳酸酯树脂的连续制造装置,其中当向聚合槽中的液相供应熔融的反应物时,或者将熔融的反应物供应到聚合槽中的气相中 插入管,在至少一个聚合槽中,和/或通过使用三个垂直聚合槽和一个卧式聚合槽,通过芳族二羟基化合物和碳酸二酯之间的酯交换反应生产聚碳酸酯树脂,该立式聚合槽装有搅拌装置, 将蒸馏管10c的壁面温度T设定为高于副产物苯酚的沸点t1的温度,使得副产物苯酚在至少第三垂直聚合槽中的压力下的沸点t1的关系 14,蒸馏管10c的壁面温度T和第三纵向聚合体的内部温度t2 n坦克14满足公式(1)。 t1

    Image forming apparatus and a sheet conveying method of the image forming apparatus
    18.
    发明申请
    Image forming apparatus and a sheet conveying method of the image forming apparatus 失效
    图像形成装置和图像形成装置的片材输送方法

    公开(公告)号:US20060056895A1

    公开(公告)日:2006-03-16

    申请号:US11114869

    申请日:2005-04-26

    IPC分类号: G03G15/00

    CPC分类号: G03G15/6576

    摘要: An image forming apparatus having: an image forming portion to form an image on a sheet; a fixing device to fix the image to the sheet by heating; a conveying path switching member to switch a conveying direction of the sheet, which is provided on downstream of the fixing device in a sheet conveying direction; a first conveying path which has a first curved portion and is provided on downstream of the conveying path switching member; a second conveying path which has a second curved portion and is provided on downstream of the conveying path switching member; a curl applying member which is provided on downstream of the fixing device, and on upstream of the first and second curved portions; and a control unit to control driving of the conveying path switching member and of the curl applying member.

    摘要翻译: 一种图像形成装置,具有:在片材上形成图像的图像形成部; 用于通过加热将图像固定到片材的定影装置; 输送路径切换构件,用于切换在片材输送方向上设置在定影装置的下游的片材的输送方向; 第一输送路径,其具有第一弯曲部分,并设置在输送路径切换构件的下游; 第二输送路径,具有第二弯曲部分,并设置在输送路径切换构件的下游; 卷曲施加构件,其设置在所述固定装置的下游,并且在所述第一和第二弯曲部分的上游; 以及控制单元,用于控制输送路径切换构件和卷曲施加构件的驱动。

    Wafer
    19.
    发明授权
    Wafer 失效
    晶圆

    公开(公告)号:US6013236A

    公开(公告)日:2000-01-11

    申请号:US941067

    申请日:1997-09-30

    CPC分类号: C04B35/575

    摘要: A wafer employing a silicon carbide sintered body is provided. The density of the silicon carbide sintered body is 2.9 g/cm.sup.3 or more. The silicon carbide sintered body is obtained by sintering a mixture in which silicon carbide powder and a non-metal-based sintering additive are mixed uniformly. The non-metal-based sintering additive is formed of an organic compound which generates carbon upon heating or the like. As a result, a wafer with excellent heat resistance and acid resistance and which causes little contamination is provided.

    摘要翻译: 提供了使用碳化硅烧结体的晶片。 碳化硅烧结体的密度为2.9g / cm 3以上。 通过烧结其中碳化硅粉末和非金属类烧结添加剂均匀混合的混合物来获得碳化硅烧结体。 非金属类烧结添加剂由加热等产生碳的有机化合物形成。 结果,提供了具有优异的耐热性和耐酸性并且几乎没有污染的晶片。