公开(公告)号：US11955541B2

公开(公告)日：2024-04-09

申请号：US17335026

申请日：2021-05-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chi-Hsiao Chen ,  Kai-Lin Lee

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/66462

Abstract: A semiconductor device includes a substrate, a buffer layer disposed on the substrate, a channel layer disposed on the buffer layer, a barrier layer disposed on the buffer layer, and a passivation layer disposed on the barrier layer. The semiconductor device further includes a device isolation region that extends through the passivation layer, the barrier layer, and at least a portion of the channel layer, and encloses a first device region of the semiconductor device. A damage concentration of the device isolation region varies along a depth direction, and is highest near a junction between the barrier layer and the channel layer.

公开(公告)号：US20230326980A1

公开(公告)日：2023-10-12

申请号：US17737041

申请日：2022-05-05

Applicant: United Microelectronics Corp.

Inventor： Chi-Hsiao Chen ,  Tzyy-Ming Cheng ,  Wei Jen Chen ,  Kai Lin Lee

IPC: H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778

CPC classification number: H01L29/402 ,  H01L29/7786 ,  H01L29/42316 ,  H01L29/41775

Abstract: A high electron mobility transistor (HEMT) device including the following components is provided. A gate electrode is located on a barrier layer. A source electrode is located on the first side of the gate electrode. A drain electrode is located on the second side of the gate. A source field plate is connected to the source electrode. The source field plate includes first, second, and third field plate portions. The first field plate portion is connected to the source electrode and is located on the first side of the gate electrode. The second field plate portion is located on the second side of the gate electrode. The third field plate portion is connected to the end of the first field plate portion and the end of the second field plate portion. The source field plate has a first opening located directly above the gate electrode.

公开(公告)号：US20220336650A1

公开(公告)日：2022-10-20

申请号：US17335026

申请日：2021-05-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chi-Hsiao Chen ,  Kai-Lin Lee

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66 ,  H01L29/20

Abstract: A semiconductor device includes a substrate, a buffer layer disposed on the substrate, a channel layer disposed on the buffer layer, a barrier layer disposed on the buffer layer, and a passivation layer disposed on the barrier layer. The semiconductor device further includes a device isolation region that extends through the passivation layer, the barrier layer, and at least a portion of the channel layer, and encloses a first device region of the semiconductor device. A damage concentration of the device isolation region varies along a depth direction, and is highest near a junction between the barrier layer and the channel layer.