公开(公告)号：US20240014307A1

公开(公告)日：2024-01-11

申请号：US17888523

申请日：2022-08-16

Applicant: United Microelectronics Corp.

Inventor： Wei Jen Chen ,  Kai Lin Lee

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/66462 ,  H01L29/42316 ,  H01L29/401

Abstract: A high electron mobility transistor (HEMT) device and a method of forming the HEMT device are provided. The HEMT device includes a substrate, a channel layer, a barrier layer, and a gate structure. The substrate has at least one active region. The channel layer is disposed on the at least one active region. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The gate structure includes a metal layer and a P-type group III-V semiconductor layer vertically disposed between the metal layer and the barrier layer. The P-type group III-V semiconductor layer includes a lower portion and an upper portion on the lower portion, and the upper portion has a top area greater than a top area of the lower portion.

公开(公告)号：US20230326980A1

公开(公告)日：2023-10-12

申请号：US17737041

申请日：2022-05-05

Applicant: United Microelectronics Corp.

Inventor： Chi-Hsiao Chen ,  Tzyy-Ming Cheng ,  Wei Jen Chen ,  Kai Lin Lee

IPC: H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778

CPC classification number: H01L29/402 ,  H01L29/7786 ,  H01L29/42316 ,  H01L29/41775

Abstract: A high electron mobility transistor (HEMT) device including the following components is provided. A gate electrode is located on a barrier layer. A source electrode is located on the first side of the gate electrode. A drain electrode is located on the second side of the gate. A source field plate is connected to the source electrode. The source field plate includes first, second, and third field plate portions. The first field plate portion is connected to the source electrode and is located on the first side of the gate electrode. The second field plate portion is located on the second side of the gate electrode. The third field plate portion is connected to the end of the first field plate portion and the end of the second field plate portion. The source field plate has a first opening located directly above the gate electrode.

公开(公告)号：US20230402537A1

公开(公告)日：2023-12-14

申请号：US17864325

申请日：2022-07-13

Applicant: United Microelectronics Corp.

Inventor： Huai-Tzu Chiang ,  Kai Lin Lee ,  Zhi-Cheng Lee ,  Chuang-Han Hsieh

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/66462

Abstract: A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channel layer. The buffer layer is located between the substrate and the channel layer. The plurality of amorphous regions are located in the buffer layer below the source and the drain.

公开(公告)号：US12176403B2

公开(公告)日：2024-12-24

申请号：US17737041

申请日：2022-05-05

Applicant: United Microelectronics Corp.

Inventor： Chi-Hsiao Chen ,  Tzyy-Ming Cheng ,  Wei Jen Chen ,  Kai Lin Lee

IPC: H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778

Abstract: A high electron mobility transistor (HEMT) device including the following components is provided. A gate electrode is located on a barrier layer. A source electrode is located on the first side of the gate electrode. A drain electrode is located on the second side of the gate. A source field plate is connected to the source electrode. The source field plate includes first, second, and third field plate portions. The first field plate portion is connected to the source electrode and is located on the first side of the gate electrode. The second field plate portion is located on the second side of the gate electrode. The third field plate portion is connected to the end of the first field plate portion and the end of the second field plate portion. The source field plate has a first opening located directly above the gate electrode.