公开(公告)号：US09093465B2

公开(公告)日：2015-07-28

申请号：US14102515

申请日：2013-12-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ting Li ,  Po-Cheng Huang ,  Wu-Sian Sie ,  Chun-Hsiung Wang ,  Yi-Liang Liu ,  Chia-Lin Hsu ,  Rai-Min Huang

IPC: H01L21/3205 ,  H01L29/66 ,  H01L21/321 ,  H01L21/02

CPC classification number: H01L29/66545 ,  H01L21/02074 ,  H01L21/02112 ,  H01L21/02318 ,  H01L21/32055 ,  H01L21/3212 ,  H01L29/66795

Abstract: A method of fabricating a semiconductor device includes the following steps. A substrate including at least a fin structure is provided, and a material layer is formed to cover the fin structure. Then, a first planarization process is performed on the material layer to form a first material layer, and an oxide layer is formed on the first material layer. Subsequently, the oxide layer is totally removed to expose the first material layer, and a second material layer is formed in-situ on the first material layer after totally removing the oxide layer.

Abstract translation: 制造半导体器件的方法包括以下步骤。 提供至少包括翅片结构的基板，并且形成材料层以覆盖翅片结构。 然后，在材料层上进行第一平面化处理以形成第一材料层，并且在第一材料层上形成氧化物层。 随后，完全除去氧化物层以露出第一材料层，并且在完全除去氧化物层之后，在第一材料层上原位形成第二材料层。

公开(公告)号：US20150140819A1

公开(公告)日：2015-05-21

申请号：US14083456

申请日：2013-11-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Cheng Huang ,  Yu-Ting Li ,  Chun-Hsiung Wang ,  Wu-Sian Sie ,  Yi-Liang Liu ,  Chia-Lin Hsu ,  I-Ming Tseng

IPC: H01L21/3105 ,  H01L21/762

CPC classification number: H01L21/31053 ,  H01L21/76224

Abstract: A semiconductor process includes the following steps. A substrate having trenches with different sizes is provided. A first oxide layer is formed to entirely cover the substrate. A prevention layer is formed on the first oxide layer. A first filling layer is formed on the prevention layer and fills the trenches until the first filling layer is higher than the substrate. A first polishing process is performed to polish the first filling layer until exposing the prevention layer. A second polishing process is performed to polish the first filling layer, the prevention layer and the first oxide layer until the substrate is exposed.

Abstract translation: 半导体工艺包括以下步骤。 提供具有不同尺寸的沟槽的衬底。 形成第一氧化物层以完全覆盖衬底。 在第一氧化物层上形成防止层。 第一填充层形成在预防层上并填充沟槽直到第一填充层高于衬底。 执行第一抛光处理以抛光第一填充层直到暴露预防层。 进行第二抛光处理以抛光第一填充层，防止层和第一氧化物层，直到基板被暴露。