公开(公告)号：US20240047266A1

公开(公告)日：2024-02-08

申请号：US17880685

申请日：2022-08-04

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chia-Liang Liao ,  Chee Hau Ng ,  Ching-Yang Wen ,  Purakh Raj Verma

IPC分类号： H01L21/762 ,  H01L21/304 ,  H01L21/768

CPC分类号： H01L21/76251 ,  H01L21/304 ,  H01L21/76865

摘要： A method of forming a protective layer utilized in a silicon remove process includes bonding a first wafer to a second wafer, wherein the first wafer comprises a first silicon substrate with a first device structure disposed thereon and the second wafer comprises a second silicon substrate with a second device structure disposed thereon. After that, a first trim process is performed to thin laterally an edge of the first wafer and an edge of the second device structure. After the first trim process, a protective layer is formed to cover a back side of the second silicon substrate. After forming the protective layer, a silicon remove process is performed to remove only the first silicon substrate.

公开(公告)号：US20230411343A1

公开(公告)日：2023-12-21

申请号：US17883595

申请日：2022-08-08

申请人： United Microelectronics Corp.

发明人： Sheng Zhang ,  Kai Zhu ,  Chien-Kee Pang ,  Chia-Liang Liao

IPC分类号： H01L23/00 ,  H01L21/02

CPC分类号： H01L24/80 ,  H01L21/02337 ,  H01L2224/80895 ,  H01L2224/80896

摘要： Provided is a manufacturing method of a semiconductor structure. The manufacturing method includes the following steps. A first dielectric layer is formed on a first substrate. A second dielectric layer is formed on a second substrate. A first heat treatment is performed on the first dielectric layer and the second dielectric layer, wherein a temperature of the first heat treatment is between 300° C. and 400° C. A first conductive via is formed in the first dielectric layer. A second conductive via is formed in the second dielectric layer. The first substrate and the second substrate are bonded in a manner that the first dielectric layer faces the second dielectric layer, so as to connect the first conductive via and the second conductive via.