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公开(公告)号：US12278210B2
公开(公告)日：2025-04-15
申请号：US17883595
申请日：2022-08-08
Applicant: United Microelectronics Corp.
Inventor： Sheng Zhang , Kai Zhu , Chien-Kee Pang , Chia-Liang Liao
Abstract: Provided is a manufacturing method of a semiconductor structure. The manufacturing method includes the following steps. A first dielectric layer is formed on a first substrate. A second dielectric layer is formed on a second substrate. A first heat treatment is performed on the first dielectric layer and the second dielectric layer, wherein a temperature of the first heat treatment is between 300° C. and 400° C. A first conductive via is formed in the first dielectric layer. A second conductive via is formed in the second dielectric layer. The first substrate and the second substrate are bonded in a manner that the first dielectric layer faces the second dielectric layer, so as to connect the first conductive via and the second conductive via.
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公开(公告)号：US20230411343A1
公开(公告)日：2023-12-21
申请号：US17883595
申请日：2022-08-08
Applicant: United Microelectronics Corp.
Inventor： Sheng Zhang , Kai Zhu , Chien-Kee Pang , Chia-Liang Liao
CPC classification number: H01L24/80 , H01L21/02337 , H01L2224/80895 , H01L2224/80896
Abstract: Provided is a manufacturing method of a semiconductor structure. The manufacturing method includes the following steps. A first dielectric layer is formed on a first substrate. A second dielectric layer is formed on a second substrate. A first heat treatment is performed on the first dielectric layer and the second dielectric layer, wherein a temperature of the first heat treatment is between 300° C. and 400° C. A first conductive via is formed in the first dielectric layer. A second conductive via is formed in the second dielectric layer. The first substrate and the second substrate are bonded in a manner that the first dielectric layer faces the second dielectric layer, so as to connect the first conductive via and the second conductive via.
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