公开(公告)号：US08746376B2

公开(公告)日：2014-06-10

申请号：US13722250

申请日：2012-12-20

Applicant: US Synthetic Corporation

Inventor： Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

IPC: E21B10/36 ,  B32B9/00 ,  B01J3/06

CPC classification number: E21B10/46 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

Abstract: Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is less than about 1.0. θ = x 6 · σ , where x is the average grain size of the substantially unimodal diamond grain size distribution, and σ is the standard deviation of the substantially unimodal diamond grain size distribution.

Abstract translation: 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经受HPHT方法，所形成的PCD材料和包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，PCD材料包括多个结合的金刚石晶粒，其表现出基本上单峰金刚石晶粒尺寸分布，其至少部分地由参数和特征表征; 小于约1.0。 ＆thetas; = x 6·＆sgr ，其中x是基本上单峰金刚石晶粒尺寸分布的平均晶粒尺寸， 是基本上单峰金刚石晶粒尺寸分布的标准偏差。

公开(公告)号：US08701798B1

公开(公告)日：2014-04-22

申请号：US13914413

申请日：2013-06-10

Applicant: US Synthetic Corporation

Inventor： Jiang Qian ,  Debkumar Mukhopadhyay ,  Jason Wiggins ,  Kenneth E. Bertagnolli ,  Shawn C. Scott ,  Kevin Duy Nguyen ,  Michael A. Vail

IPC: E21B10/42

CPC classification number: E21B10/56 ,  E21B10/43 ,  E21B10/52 ,  E21B10/567 ,  E21B10/633

Abstract: Some embodiments relate to cutting element assemblies including a superabrasive cutting element that may be axially compressed to enhance the damage tolerance thereof, enclosed in an enclosure that exposes the superabrasive cutting element therethrough, enclosed in an enclosure that restricts rotation of the superabrasive cutting element, or combinations of the foregoing. Additionally, some embodiments relate to cutting element assemblies in which a superabrasive cutting element is mechanically fastened to a base, such as a substrate or directly to a bit body of a rotary drill bit. Some embodiments also relate to cutting element assemblies including one or more superabrasive cutting elements that are rotatable about a longitudinal axis of the cutting element assembly, that may be axially compressed to enhance the damage tolerance thereof, that may be enclosed in an enclosure that exposes the superabrasive cutting element therethrough, or combinations thereof.

Abstract translation: 一些实施例涉及切割元件组件，其包括可以被轴向压缩以增强其破坏公差的超研磨切割元件，其包围在限制超研磨切割元件的旋转的外壳中的外罩中，该外壳将露出超硬磨料切割元件， 上述的组合。 另外，一些实施例涉及切割元件组件，其中超研磨切割元件机械地紧固到基座，例如基底或直接连接到旋转钻头的钻头体。 一些实施例还涉及切割元件组件，其包括可围绕切割元件组件的纵向轴线旋转的一个或多个超级研磨切割元件，其可以被轴向压缩以增强其损伤容限，其可以封闭在暴露于 超研磨切割元件或其组合。

公开(公告)号：US20130105232A1

公开(公告)日：2013-05-02

申请号：US13722250

申请日：2012-12-20

Applicant: US SYNTHETIC CORPORATION

Inventor： Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

IPC: E21B10/46

CPC classification number: E21B10/46 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

Abstract: Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is less than about 1.0. θ = x 6 · σ , where x is the average grain size of the substantially unimodal diamond grain size distribution, and σ is the standard deviation of the substantially unimodal diamond grain size distribution.

Abstract translation: 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经受HPHT方法，所形成的PCD材料和包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，PCD材料包括多个结合的金刚石晶粒，其表现出基本上单峰金刚石晶粒尺寸分布，其至少部分地由小于约1.0的参数θ表征。 θ= x 6·sigma，其中x是基本上单峰金刚石晶粒尺寸分布的平均晶粒尺寸，σ是基本上单峰金刚石晶粒尺寸分布的标准偏差。