公开(公告)号：US09136276B1

公开(公告)日：2015-09-15

申请号：US14255977

申请日：2014-04-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Huei Huang ,  Sung-Bin Lin ,  Wen-Chung Chang ,  Feng-Ji Tsai ,  Yen-Ting Ho ,  Chien-Hung Chen

IPC: H01L27/115 ,  H01L29/792 ,  H01L29/66

CPC classification number: H01L27/11568 ,  H01L21/26513 ,  H01L27/11573 ,  H01L29/42348 ,  H01L29/6659 ,  H01L29/66833 ,  H01L29/7833 ,  H01L29/792

Abstract: A method for forming a memory cell structure includes following steps. A substrate including at least a memory cell region defined thereon is provided, and a first gate stack is formed in the memory cell region. A first LDD implantation is performed to form a first LDD at one side of the first gate stack in the memory cell region, and the first LDD includes a first conductivity type. A second LDD implantation is performed to form a second LDD at one side of the first gate stack opposite to the first LDD in the memory cell region, and the second LDD includes the first conductivity type. The first LDD and the second LDD are different from each other.

Abstract translation: 一种用于形成存储单元结构的方法包括以下步骤。 提供至少包括限定在其上的存储单元区域的衬底，并且在存储单元区域中形成第一栅极堆叠。 执行第一LDD注入以在存储单元区域中的第一栅极堆叠的一侧形成第一LDD，并且第一LDD包括第一导电类型。 执行第二LDD注入以在存储单元区域中与第一LDD相对的第一栅极堆叠的一侧处形成第二LDD，并且第二LDD包括第一导电类型。 第一LDD和第二LDD彼此不同。

公开(公告)号：US20140206174A1

公开(公告)日：2014-07-24

申请号：US14231659

申请日：2014-03-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Hsiang Chang ,  Sung-Bin Lin

IPC: H01L21/266

CPC classification number: H01L21/266 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0635 ,  H01L29/66272 ,  H01L29/7304 ,  H01L29/872

Abstract: A method for fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, and a first region, a second region and a third region are defined thereon. Then, a first well having a first conductive type is formed in the semiconductor substrate of the first region and the second region, respectively. A semiconductor layer partially overlapping the first well of the second region is formed. Furthermore, a second well having a second conductive type is formed in the semiconductor substrate of the third region and the first well of the second region respectively, where the second well of the second region is disposed underneath the semiconductor layer.

Abstract translation: 一种制造半导体器件的方法包括以下步骤。 首先，提供半导体衬底，并且在其上限定第一区域，第二区域和第三区域。 然后，分别在第一区域和第二区域的半导体衬底中形成具有第一导电类型的第一阱。 形成与第二区域的第一阱部分重叠的半导体层。 此外，具有第二导电类型的第二阱分别形成在第三区域的半导体衬底和第二区域的第一阱中，其中第二区域的第二阱设置在半导体层下方。