公开(公告)号：US20170040454A1

公开(公告)日：2017-02-09

申请号：US14818487

申请日：2015-08-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Hsien Huang ,  Tsang-Hsuan Wang ,  James Tsai

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/161 ,  H01L29/24 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/7848 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/66636

Abstract: A manufacturing method of a semiconductor structure is provided. The manufacturing method of the semiconductor structure includes the following steps: providing a substrate; forming a gate structure on the substrate; forming a recess in the substrate at a lateral side of the gate structure; performing a pre-bake process at a temperature of 740-840° C. and under a pressure of equal to or higher than 150 torr; and forming an epitaxial buffer layer in the recess.

Abstract translation: 提供一种半导体结构的制造方法。 半导体结构的制造方法包括以下步骤：提供基板; 在基板上形成栅极结构; 在栅极结构的侧面在衬底中形成凹陷; 在740-840℃的温度和等于或高于150托的压力下进行预烘烤过程; 以及在所述凹部中形成外延缓冲层。