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公开(公告)号：US20100128520A1
公开(公告)日：2010-05-27
申请号：US12502213
申请日：2009-07-13
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
IPC分类号： G11C11/14
CPC分类号： G11C11/161
摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.
摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。
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公开(公告)号：US08289756B2
公开(公告)日：2012-10-16
申请号：US12502213
申请日：2009-07-13
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
IPC分类号： G11C11/00
CPC分类号： G11C11/161
摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.
摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。
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公开(公告)号：US20120299135A1
公开(公告)日：2012-11-29
申请号：US13568409
申请日：2012-08-07
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
IPC分类号： H01L29/82
CPC分类号： G11C11/161
摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.
摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。
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公开(公告)号：US07876604B2
公开(公告)日：2011-01-25
申请号：US12390006
申请日：2009-02-20
申请人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
发明人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
CPC分类号： G11C11/1673
摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。
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公开(公告)号：US20100110784A1
公开(公告)日：2010-05-06
申请号：US12390006
申请日：2009-02-20
申请人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
发明人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： G11C11/1673
摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。
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公开(公告)号：US08194444B2
公开(公告)日：2012-06-05
申请号：US12968441
申请日：2010-12-15
申请人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
发明人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
CPC分类号： G11C11/1673
摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。
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公开(公告)号：US20110085373A1
公开(公告)日：2011-04-14
申请号：US12968441
申请日：2010-12-15
申请人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
发明人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
IPC分类号： G11C11/16
CPC分类号： G11C11/1673
摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。
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公开(公告)号：US07894250B2
公开(公告)日：2011-02-22
申请号：US12405918
申请日：2009-03-17
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
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公开(公告)号：US20110019466A1
公开(公告)日：2011-01-27
申请号：US12900303
申请日：2010-10-07
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译： 一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。 在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。 修复平面在MTJ中注入磁场以修复卡住的缺陷状况。
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公开(公告)号：US20100238721A1
公开(公告)日：2010-09-23
申请号：US12405918
申请日：2009-03-17
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译： 一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。 在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。 修复平面在MTJ中注入磁场以修复卡住的缺陷状况。
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