公开(公告)号：US20110026802A1

公开(公告)日：2011-02-03

申请号：US12562159

申请日：2009-09-18

Applicant: Yen-Chu Chen ,  Kuo-Tung Kao ,  Hong-Yu Zhu ,  Chi-Bin Wu

Inventor： Yen-Chu Chen ,  Kuo-Tung Kao ,  Hong-Yu Zhu ,  Chi-Bin Wu

IPC: G06K9/00

CPC classification number: G06T7/74 ,  G06T2207/10121 ,  G06T2207/30204

Abstract: An analysis method for a regional image is disclosed for an image datum from a C-arm device. The analysis method includes: providing an indication module, reading the image datum, selecting a plurality of ROIs (Regions of Interest), calculating an average brightness of each of the ROIs, searching every of the steel ball image data, comparing each of the steel ball image data and analyzing each of the steel ball image data. By individually analyzing the regional image datum, the brighter or darker image signal can be excluded so that it can improve precision during searching the steel ball image data. Moreover, it is also more effective for comparing an image profile of the steel ball image datum with a real profile of the steel ball of the indication module. Thus, the steel ball image can be readily defined by its correspondence with the steel ball of the indication module.

Abstract translation: 公开了一种用于区域图像的分析方法，用于来自C臂装置的图像数据。 分析方法包括：提供指示模块，读取图像数据，选择多个ROI（感兴趣区域），计算每个ROI的平均亮度，搜索每个钢球图像数据，比较每个钢 球图像数据并分析每个钢球图像数据。 通过单独分析区域图像基准，可以排除更亮或更暗的图像信号，以便在搜索钢球图像数据期间提高精度。 此外，将钢球图像数据的图像轮廓与指示模块的钢球的实际轮廓进行比较也更有效。 因此，可以通过其与指示模块的钢球的对应关系来容易地定义钢球图像。

公开(公告)号：US20090298294A1

公开(公告)日：2009-12-03

申请号：US12129978

申请日：2008-05-30

Applicant: Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

Inventor： Yen-Chu Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang ,  Keng-Jen Liu

IPC: C25F3/30 ,  H01L21/302

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/02063

Abstract: A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.

Abstract translation: 描述了清除天然氧化物的方法。 提供了一种衬底，包括其中形成有自然氧化物层的暴露部分。 使用三氟化氮（NF 3）和氨（NH 3）作为反应气体对基板进行清除处理，其中NF 3的体积流量大于NH 3的体积流量。

公开(公告)号：US20080305610A1

公开(公告)日：2008-12-11

申请号：US12190572

申请日：2008-08-12

Applicant: Yen-Chu Chen ,  Hsin-Kun Chu ,  Teng-Chun Tsai ,  Chia-Hsi Chen

Inventor： Yen-Chu Chen ,  Hsin-Kun Chu ,  Teng-Chun Tsai ,  Chia-Hsi Chen

IPC: H01L21/76

CPC classification number: H01L21/31053

Abstract: A method of forming a shallow trench isolation structure includes steps of providing a substrate having a patterned mask layer formed thereon, wherein a trench is located in the substrate and the patterned mask layer exposes the trench. Thereafter, a dielectric layer is formed over the substrate to fill the trench. Then, a main polishing process with a first polishing rate is performed to remove a portion of the dielectric layer. An assisted polishing process is performed to remove the dielectric layer and a portion of the mask layer. The assisted polishing process includes steps of providing a slurry in a first period of time and then providing a solvent and performing a polishing motion of a second polishing rate in a second period of time. The second polishing rate is slower than the first polishing rate. Further, the mask layer is removed.

Abstract translation: 形成浅沟槽隔离结构的方法包括提供其上形成有图案化掩模层的衬底的步骤，其中沟槽位于衬底中，并且图案化掩模层暴露沟槽。 此后，在衬底上形成电介质层以填充沟槽。 然后，执行具有第一抛光速率的主抛光工艺以去除电介质层的一部分。 执行辅助抛光处理以去除介电层和掩模层的一部分。 辅助抛光方法包括以下步骤：在第一时间段内提供浆料，然后提供溶剂并在第二时间段内执行第二抛光速率的抛光运动。 第二抛光速率比第一抛光速度慢。 此外，去除掩模层。

公开(公告)号：US20080045014A1

公开(公告)日：2008-02-21

申请号：US11465457

申请日：2006-08-18

Applicant: Yen-Chu Chen ,  Hsin-Kun Chu ,  Teng-Chun Tsai ,  Chia-Hsi Chen

Inventor： Yen-Chu Chen ,  Hsin-Kun Chu ,  Teng-Chun Tsai ,  Chia-Hsi Chen

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31053

Abstract: A complex chemical mechanical polishing process for planarizing a structure. The process comprises steps of performing a main polishing process with a first polishing rate, wherein a slurry is provided. An assisted polishing process is then performed to planarizing the structure. The assisted polishing process comprises steps of providing the slurry in a first period of time and then providing a solvent and performing a polishing motion of a second polishing rate in a second period of time. The second polishing rate is slower than the first polishing rate.

Abstract translation: 用于平面化结构的复杂化学机械抛光工艺。 该方法包括以第一抛光速率进行主抛光工艺的步骤，其中提供浆料。 然后进行辅助抛光处理以平坦化结构。 辅助抛光方法包括以下步骤：在第一时间段内提供浆料，然后提供溶剂并在第二时间段内执行第二抛光速率的抛光运动。 第二抛光速率比第一抛光速度慢。