Light emitting diode and fabricating method thereof
    11.
    发明申请
    Light emitting diode and fabricating method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US20060163599A1

    公开(公告)日:2006-07-27

    申请号:US11108966

    申请日:2005-04-19

    IPC分类号: H01L29/22

    摘要: A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.

    摘要翻译: 提供一种发光二极管及其制造方法。 在衬底上形成发光二极管外延结构,然后蚀刻发光二极管外延结构以形成凹陷。 然后用透明电介质材料填充凹部。 依次形成欧姆接触层和反射层,然后进行蚀刻以露出透明电介质材料。 最后,形成粘合导电复合层以将欧姆接触层和反射层固定在发光二极管外延结构上。

    Light emitting diode and fabricating method thereof
    12.
    发明授权
    Light emitting diode and fabricating method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US08288181B2

    公开(公告)日:2012-10-16

    申请号:US12833648

    申请日:2010-07-09

    IPC分类号: H01L21/00

    CPC分类号: H01L33/0079 H01L33/44

    摘要: A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

    摘要翻译: 公开了一种发光二极管及其制造方法。 在衬底上形成发光二极管外延结构,然后蚀刻发光二极管外延结构以形成凹陷。 然后用透明电介质材料填充凹部。 粘合层用于粘附导电衬底和发光二极管外延结构。 接下来,去除衬底。

    Method of making light emitting diode
    13.
    发明授权
    Method of making light emitting diode 有权
    制造发光二极管的方法

    公开(公告)号:US07652302B2

    公开(公告)日:2010-01-26

    申请号:US11108966

    申请日:2005-04-19

    IPC分类号: H01L33/00

    摘要: A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.

    摘要翻译: 提供一种发光二极管及其制造方法。 在衬底上形成发光二极管外延结构,然后蚀刻发光二极管外延结构以形成凹陷。 然后用透明电介质材料填充凹部。 依次形成欧姆接触层和反射层,然后进行蚀刻以露出透明电介质材料。 最后,形成粘合导电复合层以将欧姆接触层和反射层固定在发光二极管外延结构上。

    Light emitting diode and method making the same
    14.
    发明授权
    Light emitting diode and method making the same 有权
    发光二极管及方法制作相同

    公开(公告)号:US07498185B2

    公开(公告)日:2009-03-03

    申请号:US12031508

    申请日:2008-02-14

    IPC分类号: H01L21/00

    摘要: A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.

    摘要翻译: 提供一种发光二极管及其制造方法。 发光二极管包括发光结构和金属反射层。 发光结构包括两个半导体层和有源层。 将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。 此外,为了提高发光效率,可以在发光结构和反射层之间形成透明接触层。