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公开(公告)号：US06871334B2
公开(公告)日：2005-03-22
申请号：US10270498
申请日：2002-10-16
申请人： Yuichi Mabuchi , Hideshi Fukumoto
发明人： Yuichi Mabuchi , Hideshi Fukumoto
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： The invention provides a method of calculating an equivalent circuit, which reduces the number of elements constituting a network to a large extent with a target accuracy secured. The method of the invention calculates an equivalent circuit by a computer, with regard to an object that has a conductor, a dielectric to support the conductor, and plural input/output terminals to the outside. Step 1 in the method receives inputs of geometry information to specify a shape of a conductor in a circuit board being the object of determining the equivalent circuit, and material information to specify a material of the circuit board; Step 2 partitions the shape of the objective conductor into meshes on the basis of the geometry information received, and creates mesh data to be expressed; Step 3 calculates a nodal admittance matrix from the mesh data, and stores the result; step 4 calculates the number of nodes and the number of independent networks on the basis of the mesh data, determines an incidence matrix, and determines the structure of an equivalent network by means of the calculated nodal admittance matrix and incidence matrix; and Step 5 determines the values of elements of the equivalent network.
摘要翻译： 本发明提供了一种计算等效电路的方法，其在确保目标精度的情况下大大减少了构成网络的元件的数量。 本发明的方法通过计算机对具有导体的物体，用于支撑导体的电介质和多个输入/输出端子连接到外部来计算等效电路。 该方法中的步骤1接收几何信息的输入，以指定作为确定等效电路的目的的电路板中的导体的形状，以及用于指定电路板的材料的材料信息; 步骤2根据接收到的几何信息将客观导体的形状划分成网格，并创建要表达的网格数据; 步骤3从网格数据计算节点导纳矩阵，并存储结果; 步骤4基于网格数据计算节点数量和独立网络数量，确定入射矩阵，并通过计算的节点导纳矩阵和入射矩阵确定等效网络的结构; 并且步骤5确定等效网络的元素的值。
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公开(公告)号：US06525950B1
公开(公告)日：2003-02-25
申请号：US09653164
申请日：2000-09-01
IPC分类号： H02M100
CPC分类号： H02M7/003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor power conversion device includes two bridge-connected semiconductor switches, an output terminal, and first and second pairs of positive and negative direct current terminals. First conductors connect the negative direct current terminals of the first and second pairs with the output terminal through one of the two bridge-connected semiconductor switches, while second conductors connect the positive direct current terminals of the first and second pairs with the other of the two bridge-connected semiconductor switches. A housing is provided, which includes the two bridge-connected semiconductor switches, and at least a portion of the first conductor and of the second conductor as a multilayer structure formed by sandwiching an insulator between the first and second conductors inside the housing. The first and second pairs of direct current terminals are arranged on one side of one plane of the housing.
摘要翻译： 半导体功率转换装置包括两个桥接的半导体开关，输出端以及第一和第二对正和负直流端子。 第一导体将第一和第二对的负直流端子与输出端子通过两个桥接的半导体开关中的一个连接，而第二导体将第一和第二对的正直流端子与两个桥接的半导体开关中的另一个连接 桥接半导体开关。 提供壳体，其包括两个桥连接的半导体开关，以及第一导体和第二导体的至少一部分，作为通过在壳体内的第一和第二导体之间夹住绝缘体而形成的多层结构。 第一和第二对直流端子布置在壳体的一个平面的一侧上。
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公开(公告)号：US06493249B2
公开(公告)日：2002-12-10
申请号：US09791731
申请日：2001-02-26
IPC分类号： H02M100
CPC分类号： H02M7/003 , H01L2224/48091 , H01L2224/49111 , H01L2924/19107 , H01L2924/00014
摘要： A semiconductor apparatus includes positive and negative side conductors for bridge-connecting semiconductor switches, constituted to a wide conductor, and laminated by sandwiching an insulator between them. A semiconductor apparatus includes positive and negative side conductors extended from its case, and an electrolytic capacitor connected to the extension portion of the positive and negative side conductors. A power converter uses the semiconductor apparatus.
摘要翻译： 半导体装置包括用于桥接半导体开关的正侧和负侧导体，构成为宽导体，并且通过在它们之间夹着绝缘体层叠。 半导体装置包括从其壳体延伸的正极和负极侧导体，以及连接到正极和负极侧导体的延伸部分的电解电容器。 功率转换器使用半导体装置。
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公开(公告)号：US06245190B1
公开(公告)日：2001-06-12
申请号：US09048075
申请日：1998-03-26
申请人： Toshio Masuda , Katsuhiko Mitani , Tetsunori Kaji , Jun'ichi Tanaka , Katsuya Watanabe , Shigeru Shirayone , Toru Otsubo , Ichiro Sasaki , Hideshi Fukumoto , Makoto Koizumi
发明人： Toshio Masuda , Katsuhiko Mitani , Tetsunori Kaji , Jun'ichi Tanaka , Katsuya Watanabe , Shigeru Shirayone , Toru Otsubo , Ichiro Sasaki , Hideshi Fukumoto , Makoto Koizumi
IPC分类号： H05H146
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32165 , H01J37/32623 , H01J37/3266 , H01J37/32678
摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.
摘要翻译： 一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性， 通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。 在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。 通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。 由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。 磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。
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