公开(公告)号：US20180323043A1

公开(公告)日：2018-11-08

申请号：US15588597

申请日：2017-05-06

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Mani Subramani

IPC: H01J37/32

CPC classification number: H01J37/32678 ,  H01J37/32201 ,  H01J37/32247 ,  H01J37/32266 ,  H01J37/32669 ,  H01J37/32935

Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

公开(公告)号：US20170032939A1

公开(公告)日：2017-02-02

申请号：US15301001

申请日：2015-03-26

Applicant: H.E.F. ,  LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

Inventor： Patrick CHOQUET ,  David DUDAY ,  Olivier BLANDENET ,  Thierry Leon LAGARDE

IPC: H01J37/32 ,  C23C16/511

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32403 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32678 ,  H01J37/32733 ,  H01J2237/3321

Abstract: According to the process, the filiform component is continuously linearly moved through magnetic dipoles arranged opposite each other and around a tube constituting a treatment chamber, and the microwave energy is introduced between at least two magnetic dipoles.

Abstract translation: 根据该过程，丝状部件通过彼此相对布置的磁偶极子和围绕构成处理室的管子连续线性移动，并且微波能量被引入至少两个磁偶极子之间。

公开(公告)号：US09215789B1

公开(公告)日：2015-12-15

申请号：US14282361

申请日：2014-05-20

Applicant: King Abdulaziz City for Science and Technology

Inventor： Ahmed M. Hala ,  Lutfi Oksuz

IPC: H05H13/00 ,  H05H1/46 ,  H01J37/32 ,  H01J37/18 ,  H01J37/244

CPC classification number: H05H1/46 ,  H01J37/18 ,  H01J37/244 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32669 ,  H01J37/32678 ,  H01J37/32972 ,  H05H2001/4607 ,  H05H2001/4622 ,  H05H2001/4667

Abstract: Systems and methods for generating plasma are disclosed. A system for generating a plasma includes a helicon plasma source and an electron cyclotron resonance (ECR) plasma source structured and arranged together to generate a plasma in a tube.

Abstract translation: 公开了用于产生等离子体的系统和方法。 用于产生等离子体的系统包括螺旋形等离子体源和电子回旋共振（ECR）等离子体源，其被构造和排列在一起以在管中产生等离子体。

公开(公告)号：US09039910B2

公开(公告)日：2015-05-26

申请号：US13276496

申请日：2011-10-19

Applicant: Banqiu Wu ,  Ajay Kumar

Inventor： Banqiu Wu ,  Ajay Kumar

IPC: C23F1/00 ,  C23F1/08 ,  H01L21/027 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/0273 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/3343 ,  H01L21/31138

Abstract: The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway.

Abstract translation: 本发明提供了控制和修改光致抗蚀剂层的线宽粗糙度（LWR）的方法和装置。 在一个实施例中，用于控制设置在基板上的光致抗蚀剂层的线宽粗糙度的装置包括具有顶壁，侧壁和限定内部处理区域的底壁的室主体，耦合到 并且一个或多个线圈或磁体设置在邻近波导的腔室主体的外圆周周围，气体源通过气体输送通道耦合到波导管。

公开(公告)号：US08840844B2

公开(公告)日：2014-09-23

申请号：US12562880

申请日：2009-09-18

Applicant: Hideki Fujita ,  Kibatsu Shinohara

Inventor： Hideki Fujita ,  Kibatsu Shinohara

IPC: H01J37/32 ,  H01J37/317 ,  H01J37/02

CPC classification number: H01J37/32678 ,  H01J37/026 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/0041

Abstract: The plasma generating apparatus includes: an antenna chamber which is disposed adjacently to a plasma chamber that produces a plasma, and which is exhausted to vacuum; an antenna which is disposed in the antenna chamber, and which radiates a high-frequency wave; a partition plate which is made of an insulator, which separates the plasma chamber from the antenna chamber to block a gas from entering the antenna chamber, and which allows the high-frequency wave radiated from the antenna to pass through the partition plate; and a magnet device which is disposed outside the plasma chamber, and which generates a magnetic field for causing electron cyclotron resonance in the plasma chamber.

Abstract translation: 等离子体发生装置包括：天线室，其与等离子体室相邻设置，产生等离子体，并被排出到真空中; 天线，其设置在天线室中，并且辐射高频波; 由绝缘体制成的分隔板，其将等离子体室与天线室分隔开，阻止气体进入天线室，并且允许从天线辐射的高频波通过隔板; 以及设置在等离子体室外部并且产生用于在等离子体室中引起电子回旋共振的磁场的磁体装置。

公开(公告)号：US08728588B2

公开(公告)日：2014-05-20

申请号：US12681203

申请日：2008-10-09

Applicant: Beat Schmidt ,  Christophe Heau ,  Philippe Maurin-Perrier

Inventor： Beat Schmidt ,  Christophe Heau ,  Philippe Maurin-Perrier

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/458 ,  C23C16/511 ,  C23C16/26

CPC classification number: H01J37/32678 ,  C23C16/26 ,  C23C16/4582 ,  C23C16/4584 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32733

Abstract: A method of treating a surface of at least one part by individual sources of an electron cyclotron resonance plasma is characterized by subjecting the part(s) to at least one movement of revolution with regard to at least one fixed linear row of elementary sources. The linear row or rows of elementary sources are disposed parallel to the axis or axes of revolution of the part or parts.

Abstract translation: 通过电子回旋共振等离子体的各个源处理至少一部分的表面的方法的特征在于，对至少一个固定的线性行的基本源进行至少一次旋转运动。 基本源的线性行或行平行于部件的旋转轴线或轴线设置。

公开(公告)号：US20120003837A1

公开(公告)日：2012-01-05

申请号：US13229843

申请日：2011-09-12

Applicant: Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

Inventor： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01L21/3065 ,  H01L21/31

CPC classification number: C23C16/4401 ,  H01J37/32091 ,  H01J37/32678 ,  H01J2237/022

Abstract: A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, a high frequency power source for plasma generation, a coil for generating a magnetic field, and a mounted electrode for mounting the substance to be processed. The method includes steps of subjecting the substance to a predetermined plasma processing, changing the magnetic field distribution, so as to make a plasma distribution of the process chamber with respect to the surface of the substance to be processed, in a convex form, at a time of igniting the plasma and after completion of the predetermined plasma processing, as compared with a plasma distribution with respect to the surface of the substance to be processed during the predetermined plasma processing.

Abstract translation: 一种等离子体处理方法，其通过使用包括处理室的半导体器件制造装置，用于向处理室供应气体的单元，用于减少处理室中的压力的​​排出单元，等离子体处理方法，用于 等离子体产生，用于产生磁场的线圈和用于安装待处理物质的安装电极。 该方法包括以下步骤：使物质经受预定的等离子体处理，改变磁场分布，以便使处理室相对于待处理物质表面的等离子体分布呈凸形， 与预定等离子体处理期间相对于被处理物质的表面的等离子体分布相比，点火等离子体的时间和预定等离子体处理完成后的时间。

公开(公告)号：US20120001550A1

公开(公告)日：2012-01-05

申请号：US12960887

申请日：2010-12-06

Applicant: Chih-Chen Chang ,  Kun-Ping Huang ,  Kang-Feng Lee

Inventor： Chih-Chen Chang ,  Kun-Ping Huang ,  Kang-Feng Lee

IPC: H01J7/00

CPC classification number: H01J37/32678

Abstract: The present invention provides a magnetic module for electron cyclotron resonance (ECR) and ECR apparatus using the magnetic module, wherein the magnetic module comprises a plurality of layers of supporting ring and a plurality of magnetic pillars. Each of the supporting rings has an outer surface and an inner surface and has a plurality of through holes radially disposed inside the supporting ring. The plurality of pillars are respectively embedded into the plurality of through holes of each supporting ring and magnetic fields of the magnetic pillars in each two adjacent supporting ring are respectively opposite to each other. The ECR apparatus of the present invention is capable of being operated under lower pressure environment for forming a single atom layer on a substrate.

Abstract translation: 本发明提供一种用于电子回旋共振（ECR）的磁性模块和使用该磁性模块的ECR装置，其中该磁性模块包括多层支撑环和多个磁性支柱。 每个支撑环具有外表面和内表面，并且具有径向地设置在支撑环内部的多个通孔。 多个支柱分别嵌入每个支撑环的多个通孔中，并且每个两个相邻支撑环中的磁柱的磁场分别彼此相对。 本发明的ECR设备能够在较低压力环境下操作，以在基板上形成单个原子层。

公开(公告)号：US20100283132A1

公开(公告)日：2010-11-11

申请号：US12614888

申请日：2009-11-09

Applicant: Sergei Jurievich Shapoval ,  Vyacheslav Aleksandrovich Tulin ,  Valery Evgenievich Zemlyakov ,  Jury Stepanovich Chetverov ,  Vladimir Leonidovich Gurtovoi

Inventor： Sergei Jurievich Shapoval ,  Vyacheslav Aleksandrovich Tulin ,  Valery Evgenievich Zemlyakov ,  Jury Stepanovich Chetverov ,  Vladimir Leonidovich Gurtovoi

IPC: H01L29/02 ,  H05H1/30 ,  H01L21/3105 ,  H01L21/3065 ,  H01L21/30

CPC classification number: H01L21/0217 ,  H01J37/32192 ,  H01J37/32678 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612

Abstract: The invention relates to microelectronics, more particularly, to methods of manufacturing solid-state devices and integrated circuits utilizing microwave plasma enhancement under conditions of electron cyclotron resonance (ECR), as well as to use of plasma treatment technology in manufacturing of different semiconductor structures. Also proposed are semiconductor device and integrated circuit and methods for their manufacturing. Technical result consists in improvement of reproducibility parameters of semiconductor structures and devices processed, enhancement of devices parameters, elimination of possibility of defects formation in different regions, and speeding-up of the treatment process.

Abstract translation: 本发明涉及微电子学，更具体地说，涉及在电子回旋共振（ECR）条件下利用微波等离子体增强的固态器件和集成电路的制造方法，以及在制造不同的半导体结构中使用等离子体处理技术。 还提出了半导体器件和集成电路及其制造方法。 技术成果包括改进半导体结构和加工设备的再现性参数，增强器件参数，消除不同区域缺陷形成的可能性，加快处理过程。

公开(公告)号：US20100230053A1

公开(公告)日：2010-09-16

申请号：US12685688

申请日：2010-01-12

Applicant: Ryoji NISHIO

Inventor： Ryoji NISHIO

IPC: H01L21/465

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32678

Abstract: The invention provides a plasma processing apparatus for subjecting a sample to plasma processing by generating plasma within a vacuum processing chamber 1, wherein multiple sets (7, 7′) of high frequency induction antennas are disposed for forming an induction electric field that rotates in the right direction on an ECR plane of the magnetic field formed within the vacuum processing chamber 1, and plasma is generated via an electron cyclotron resonance (ECR) phenomenon. A Faraday shield 9 for blocking capacitive coupling and realizing inductive coupling between the high frequency induction antenna and plasma receives power supply via a matching box 46 from an output from a Faraday shield high frequency power supply 45 subjected to control of a phase controller 44 based on the monitoring of a phase detector 47-2. Multiple filters 49 short-circuit the high frequency voltage at various portions of the Faraday shield 9 to ground, thereby preventing the generation of an uneven voltage distribution having the same frequency as the plasma generating high frequency.

Abstract translation: 本发明提供一种等离子体处理装置，用于通过在真空处理室1内产生等离子体来对样品进行等离子体处理，其中设置多个高频感应天线的组（7,7'），以形成在 在真空处理室1中形成的磁场的ECR平面上的右方向，并且经由电子回旋共振（ECR）现象产生等离子体。 用于阻止电容耦合并实现高频感应天线和等离子体之间的电感耦合的法拉第屏蔽9通过匹配盒46从经过相位控制器44的控制的法拉第屏蔽高频电源45的输出接收电源，基于 监测相位检测器47-2。 多个滤波器49将法拉第屏蔽9的各个部分的高频电压短路到地，从而防止产生与等离子体产生高频相同频率的不均匀电压分布。