公开(公告)号：US08198650B2

公开(公告)日：2012-06-12

申请号：US12329841

申请日：2008-12-08

申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

IPC分类号： H01L29/66

CPC分类号： H01L29/861 ,  H01L29/402

摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。

公开(公告)号：US20100140730A1

公开(公告)日：2010-06-10

申请号：US12329841

申请日：2008-12-08

申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

IPC分类号： H01L31/107 ,  H01L31/02 ,  H01L29/06

CPC分类号： H01L29/861 ,  H01L29/402

摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。